BC337 / BC338 NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications TO-92 Suitable for AF-Driver Stages and Low-Power Output Stages 1. Collector 2. Base Complement to BC327 / BC328 1 1 3. Emitter 2 3 2 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC337 50 V Collector-Emitter Voltage V CES BC338 30 BC337 45 V Collector-Emitter Voltage V CEO BC338 25 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C T Junction Temperature 150 C J T Storage Temperature -55 to 150 C STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337 / BC338 Rev. 1.5 BC337 / BC338 NPN Epitaxial Silicon Transistor (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit Power Dissipation 625 mW P D Derate Above 25C5.0mW/C R Thermal Resistance, Junction-to-Ambient 200 C/W JA Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit BC337 45 Collector-Emitter BV I = 10 mA, I = 0 V CEO C B Breakdown Voltage BC338 25 BC337 50 Collector-Emitter BV I = 0.1 mA, V = 0 V CES C BE Breakdown Voltage BC338 30 BV Emitter-Base Breakdown Voltage I = 0.1 mA, I = 0 5 V EBO E C BC337 V = 45 V, I = 0 2 100 CE B I Collector Cut-Off Current nA CES BC338 V = 25 V, I = 0 2 100 CE B h V = 1 V, I = 100 mA 100 630 FE1 CE C DC Current Gain h V = 1 V, I = 300 mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 500 mA, I = 50 mA 0.7 V CE C B V (on) Base-Emitter On Voltage V = 1 V, I = 300 mA 1.2 V BE CE C V = 5 V, I = 10 mA, CE C f Current Gain Bandwidth Product 100 MHz T f = 50 MHz V = 10 V, I = 0, CB E C Output Capacitance 12 pF ob f = 1 MHz h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60 ~ 100 ~ 170 ~ FE2 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337 / BC338 Rev. 1.5 2