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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BC337 / BC338 NPN Epitaxial Silicon Transistor
September 2015
BC337 / BC338
NPN Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
TO-92
Suitable for AF-Driver Stages and Low-Power Output Stages 1. Collector
2. Base
Complement to BC327 / BC328
1 1
3. Emitter
2
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing
Ordering Information
Part Number Top Mark Package Packing Method
BC33716BU BC33716 TO-92 3L Bulk
BC33716TA BC33716 TO-92 3L Ammo
BC33716TFR BC33716 TO-92 3L Tape and Reel
BC33725BU BC33725 TO-92 3L Bulk
BC33725TA BC33725 TO-92 3L Ammo
BC33725TAR BC33725 TO-92 3L Ammo
BC33725TF BC33725 TO-92 3L Tape and Reel
BC33725TFR BC33725 TO-92 3L Tape and Reel
BC33740BU BC33740 TO-92 3L Bulk
BC33740TA BC33740 TO-92 3L Ammo
BC33825TA BC33825 TO-92 3L Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
BC337 50
V Collector-Emitter Voltage V
CES
BC338 30
BC337 45
V Collector-Emitter Voltage V
CEO
BC338 25
V Emitter-Base Voltage 5 V
EBO
I Collector Current (DC) 800 mA
C
T Junction Temperature 150 C
J
T Storage Temperature -55 to 150 C
STG
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC337 / BC338 Rev. 1.5