BC490 High Current Transistors PNP Silicon Features This is a PbFree Device* BC490 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V 80 Vdc (BR)CEO (I = 10 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 80 Vdc (BR)CBO (I = 100 Adc, I = 0) C E EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I 100 nAdc CBO (V = 60 Vdc, I = 0) CB E ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 2.0 Vdc) 40 C CE (I = 100 mAdc, V = 2.0 Vdc) 60 400 C CE (I = 1.0 Adc, V = 5.0 Vdc) 15 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.25 0.5 C B (I = 1.0 Adc, I = 100 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 500 mAdc, I = 50 mAdc) 0.9 1.2 C B (I = 1.0 Adc, I = 100 mAdc) 1.0 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 150 MHz T (I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz) C CE Output Capacitance C 9.0 pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 110 pF ib (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. TURNON TIME TURNOFF TIME V +V V 1.0 V CC BB CC +40 V +40 V 5.0 s 100 R 100 R L L +10 V OUTPUT OUTPUT R R V V B B in in 0 5.0 F 5.0 F t = 3.0 ns r 100 100 *C < 6.0 pF *C < 6.0 pF S S 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits