X-On Electronics has gained recognition as a prominent supplier of BC547BZL1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC547BZL1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC547BZL1G ON Semiconductor

BC547BZL1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BC547BZL1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100mA 50V NPN
Datasheet: BC547BZL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1112: USD 0.1091 ea
Line Total: USD 121.32 
Availability - 16679
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ: 1112  Multiples: 1
Pack Size: 1
Availability Price Quantity
16679
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 1112
Multiples : 1
1112 : USD 0.1091

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA, I = 0) BC546 65 C B BC547 45 BC548 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC546 80 C BC547 50 BC548 30 Emitter Base Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) BC546 6.0 E C BC547 6.0 BC548 6.0 Collector Cutoff Current I CES (V = 70 V, V = 0) BC546 0.2 15 nA CE BE (V = 50 V, V = 0) BC547 0.2 15 CE BE (V = 35 V, V = 0) BC548 0.2 15 CE BE (V = 30 V, T = 125C) BC546/547/548 4.0 A CE A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) BC547A 90 C CE BC546B/547B/548B 150 BC548C 270 (I = 2.0 mA, V = 5.0 V) BC546 110 450 C CE BC547 110 800 110 800 BC548 BC547A 110 180 220 BC546B/547B/548B 200 290 450 BC547C/BC548C 420 520 800 (I = 100 mA, V = 5.0 V) BC547A/548A 120 C CE BC546B/547B/548B 180 BC548C 300 Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.09 0.25 C B (I = 100 mA, I = 5.0 mA) 0.2 0.6 C B (I = 10 mA, I = See Note 1) 0.3 0.6 C B Base Emitter Saturation Voltage V 0.7 V BE(sat) (I = 10 mA, I = 0.5 mA) C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.55 0.7 C CE (I = 10 mA, V = 5.0 V) 0.77 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC546 150 300 C CE BC547 150 300 BC548 150 300 Output Capacitance C 1.7 4.5 pF obo (V = 10 V, I = 0, f = 1.0 MHz) CB C Input Capacitance C 10 pF ibo (V = 0.5 V, I = 0, f = 1.0 MHz) EB C Small Signal Current Gain h fe (I = 2.0 mA, V = 5.0 V, f = 1.0 kHz) BC546 125 500 C CE BC547/548 125 900 BC547A 125 220 260 BC546B/547B/548B 240 330 500 BC547C/548C 450 600 900 Noise Figure (I = 0.2 mA, V = 5.0 V, R = 2 k , f = 1.0 kHz, f = 200 Hz) NF dB C CE S 2.0 10 BC546 BC547 2.0 10 BC548 2.0 10 1. I is value for which I = 11 mA at V = 1.0 V. B C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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