X-On Electronics has gained recognition as a prominent supplier of BC556/112 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC556/112 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC556/112 ON Semiconductor

BC556/112 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.BC556/112
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: BC556/112 IMI PACTROL TRANS.
Datasheet: BC556/112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.0554 ea
Line Total: USD 0.06 
Availability - 77
Ship by Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.0554
25 : USD 0.0277
50 : USD 0.0249
75 : USD 0.0208
100 : USD 0.0187

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC556/112 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC556/112 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor January 2016 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Features Switching and Amplifier High-Voltage: BC556, V = -65 V CEO Low-Noise: BC559, BC560 TO-92 Complement to BC546, BC547, BC548, BC549, and BC550 1. Collector 2. Base 1 1 3. Emitter 2 3 2 3 Straight Lead Bent Lead Bulk Packing Tape & Reel Ammo Packing Ordering Information Part Number Marking Package Packing Method BC556ABU BC556A TO-92 3L Bulk BC556ATA BC556A TO-92 3L Ammo BC556BTA BC556B TO-92 3L Ammo BC556BTF BC556B TO-92 3L Tape and Reel BC556BTFR BC556B TO-92 3L Tape and Reel BC557ATA BC557A TO-92 3L Ammo BC557BTA BC557B TO-92 3L Ammo BC557BTF BC557B TO-92 3L Tape and Reel BC558BTA BC558B TO-92 3L Ammo BC559BTA BC559B TO-92 3L Ammo BC559CTA BC559C TO-92 3L Ammo BC560CTA BC560C TO-92 3L Ammo 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 1 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC556 -80 V Collector-Base Voltage BC557 / BC560 -50 V CBO BC558 / BC559 -30 BC556 -65 V Collector-Emitter Voltage BC557 / BC560 -45 V CEO BC558 / BC559 -30 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -100 mA C I Peak Collector Current (Pulse) -200 mA CP I Peak Base Current (Pulse) -200 mA BP T Junction Temperature 150 C J T Storage Temperature Range -65 to +150 C STG (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit Total Power Dissipation 500 mW P D Derate Above 25C4.0mW/C R Thermal Resistance, Junction-to-Ambient 250 C/W JA Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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