BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier
High-Voltage: BC556, V = -65 V
CEO
Low-Noise: BC559, BC560
TO-92
Complement to BC546, BC547, BC548, BC549, and BC550
1. Collector
2. Base
1 1
3. Emitter
2
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing
Ordering Information
Part Number Marking Package Packing Method
BC556ABU BC556A TO-92 3L Bulk
BC556ATA BC556A TO-92 3L Ammo
BC556BTA BC556B TO-92 3L Ammo
BC556BTF BC556B TO-92 3L Tape and Reel
BC556BTFR BC556B TO-92 3L Tape and Reel
BC557ATA BC557A TO-92 3L Ammo
BC557BTA BC557B TO-92 3L Ammo
BC557BTF BC557B TO-92 3L Tape and Reel
BC558BTA BC558B TO-92 3L Ammo
BC559BTA BC559B TO-92 3L Ammo
BC559CTA BC559C TO-92 3L Ammo
BC560CTA BC560C TO-92 3L Ammo
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 1 BC556 / BC557 / BC558 / BC559 / BC560 PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
BC556 -80
V Collector-Base Voltage BC557 / BC560 -50 V
CBO
BC558 / BC559 -30
BC556 -65
V Collector-Emitter Voltage BC557 / BC560 -45 V
CEO
BC558 / BC559 -30
V Emitter-Base Voltage -5 V
EBO
I Collector Current (DC) -100 mA
C
I Peak Collector Current (Pulse) -200 mA
CP
I Peak Base Current (Pulse) -200 mA
BP
T Junction Temperature 150 C
J
T Storage Temperature Range -65 to +150 C
STG
(1)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Max. Unit
Total Power Dissipation 500 mW
P
D
Derate Above 25C4.0mW/C
R Thermal Resistance, Junction-to-Ambient 250 C/W
JA
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7 2