X-On Electronics has gained recognition as a prominent supplier of BC557BG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC557BG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC557BG ON Semiconductor

BC557BG electronic component of ON Semiconductor
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See Product Specifications
Part No.BC557BG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 50V PNP
Datasheet: BC557BG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1995 ea
Line Total: USD 1.2 
Availability - 42
Ship by Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
42
Ship by Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1995
10 : USD 0.5998
25 : USD 0.5398
100 : USD 0.4498
500 : USD 0.4048

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC557BG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC557BG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon BC556B, BC557A, B, C, BC558B ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 2.0 mAdc, I = 0) BC556 65 C B BC557 45 BC558 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 100 Adc) BC556 80 C 50 BC557 BC558 30 EmitterBase Breakdown Voltage V V (BR)EBO 5.0 (I = 100 Adc, I = 0) BC556 E C BC557 5.0 BC558 5.0 CollectorEmitter Leakage Current I CES (V = 40 V) BC556 2.0 100 nA CES (V = 20 V) BC557 2.0 100 CES BC558 2.0 100 (V = 20 V, T = 125C) BC556 4.0 A CES A BC557 4.0 BC558 4.0 ON CHARACTERISTICS DC Current Gain h FE (I = 10 Adc, V = 5.0 V) A Series Device 90 C CE B Series Devices 150 C Series Devices 270 120 800 (I = 2.0 mAdc, V = 5.0 V) BC557 C CE A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (I = 100 mAdc, V = 5.0 V) A Series Device 120 C CE B Series Devices 180 C Series Devices 300 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.075 0.3 C B (I = 10 mAdc, I = see Note 1) 0.3 0.6 C B (I = 100 mAdc, I = 5.0 mAdc) 0.25 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.7 C B (I = 100 mAdc, I = 5.0 mAdc) 1.0 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.62 0.7 C CE (I = 10 mAdc, V = 5.0 Vdc) 0.7 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) BC556 280 C CE BC557 320 BC558 360 Output Capacitance C 3.0 6.0 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB C Noise Figure NF dB (I = 0.2 mAdc, V = 5.0 V, BC556 2.0 10 C CE R = 2.0 k , f = 1.0 kHz, f = 200 Hz) BC557 2.0 10 S BC558 2.0 10 SmallSignal Current Gain h fe (I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz) BC557 125 900 C CE A Series Device 125 260 B Series Devices 240 500 C Series Devices 450 900 1. I = 10 mAdc on the constant base current characteristics, which yields the point I = 11 mAdc, V = 1.0 V. C C CE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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