BC637, BC639, BC639-16
High Current Transistors
NPN Silicon
Features
These are PbFree Devices* BC637, BC639, BC639 16
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 1) V Vdc
(BR)CEO
(I = 10 Adc, I = 0) BC637 60
C B
BC639 80
Collector Emitter ZeroGate Breakdown Voltage(Note 1) V Vdc
(BR)CES
(I = 100 Adc, I = 0) BC639 16 120
C B
Collector Base Breakdown Voltage V Vdc
(BR)CBO
(I = 100 Adc, I = 0) BC637 60
C E
BC639 80
Emitter Base Breakdown Voltage V 5.0 Vdc
(BR)EBO
(I = 10 Adc, I = 0)
E C
Collector Cutoff Current I
CBO
(V = 30 Vdc, I = 0) 100 nAdc
CB E
(V = 30 Vdc, I = 0, T = 125C) 10 Adc
CB E A
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 5.0 mAdc, V = 2.0 Vdc) 25
C CE
(I = 150 mAdc, V = 2.0 Vdc) BC637 40 160
C CE
BC639 40 160
BC639 16ZLT1 100 250
(I = 500 mA, V = 2.0 V) 25
C CE
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 500 mAdc, I = 50 mAdc) 0.5
C B
Base Emitter On Voltage V Vdc
BE(on)
(I = 500 mAdc, V = 2.0 Vdc) 1.0
C CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product f MHz
T
(I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz) 200
C CE
Output Capacitance C pF
ob
(V = 10 Vdc, I = 0, f = 1.0 MHz) 7.0
CB E
Input Capacitance C pF
ib
(V = 0.5 Vdc, I = 0, f = 1.0 MHz) 50
EB C
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
ORDERING INFORMATION
Device Package Shipping
BC637G TO92 5000 Units / Bulk
(Pb Free)
BC637RL1G TO92 2000 / Tape & Reel
(Pb Free)
BC639G TO92 5000 Units / Bulk
(Pb Free)
BC639RL1G TO92 2000 / Tape & Reel
(Pb Free)
BC639ZL1G TO92 2000 / Ammo Box
(Pb Free)
BC639 16ZL1G TO92 2000 / Ammo Box
(Pb Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.