BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector Emitter Voltage V 25 V CEO 2 Collector Base Voltage V 30 V CBO SOT23 CASE 318 Emitter Base Voltage V 5.0 V EBO STYLE 6 Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D 5x M (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, R 556 C/W JA JunctiontoAmbient 5x = Device Code Total Device Dissipation Alumina P x = F or G D Substrate, (Note 2) M = Date Code* T = 25C 300 mW A =PbFree Package Derate above 25C 2.4 mW/C (Note: Microdot may be in either location) Thermal Resistance, R 417 C/W JA *Date Code orientation and/or overbar may JunctiontoAmbient vary depending upon manufacturing location. Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering and shipping information in the package assumed, damage may occur and reliability may be affected. dimensions section on page 2 of this data sheet. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: October, 2016 Rev. 5 BC80825LT1/DBC80825LT1G, BC80840LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 25 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 30 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO nA (V = 20 V) 100 CB A (V = 20 V, T = 150C) 5.0 CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80825LT1G 160 400 C CE BC80840LT1G 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, I = 1.0 V) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80825LT1G SOT23 5F 3000 / Tape & Reel (PbFree) SBC80825LT1G BC80840LT1G SOT23 5G 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2