BC807 / BC808 PNP Epitaxial Silicon Transistor November 2014 BC807 / BC808 PNP Epitaxial Silicon Transistor Features 3 Switching and Amplifier Applications Suitable for AF-Driver Stages and Low Power Output Stages 2 Complement to BC817 / BC818 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method BC80716MTF 9FA SOT-23 3L Tape and Reel BC80725MTF 9FB SOT-23 3L Tape and Reel BC80740MTF 9FC SOT-23 3L Tape and Reel BC80840MTF 9GC SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit BC807 -50 V Collector-Emitter Voltage V CES BC808 -30 BC807 -45 V Collector-Emitter Voltage V CEO BC808 -25 V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -800 mA C T Junction Temperature 150 C J T Storage Temperature -65 to +150 C STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 1 BC807 / BC808 PNP Epitaxial Silicon Transistor (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit Power Dissipation 310 mW P D Derate Above 25C2.48mW/C R Thermal Resistance, Junction-to-Ambient 403 C/W JA Note: 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit BC807 -45 Collector-Emitter Breakdown BV I = -10 mA, I = 0 V CEO C B Voltage BC808 -25 BC807 -50 Collector-Emitter Breakdown BV I = -0.1 mA, V = 0 V CES C BE Voltage BC808 -30 BV Emitter-Base Breakdown Voltage I = -0.1 mA, I = 0 -5 V EBO E C I Collector Cut-Off Current V = -25 V, V = 0 -100 nA CES CE BE I Emitter Cut-Off Current V = -4 V, I = 0 -100 nA EBO EB C h V = -1 V, I = -100 mA 100 630 FE1 CE C DC Current Gain h V = -1 V, I = -300 mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -500 mA, I = -50 mA -0.7 V CE C B V (on) Base-Emitter On Voltage V = -1 V, I = -300 mA -1.2 V BE CE C V = -5 V, I = -10 mA, CE C f Current Gain Bandwidth Product 100 MHz T f = 50 MHz C Output Capacitance V = -10 V, f = 1 MHz 12 pF ob CB h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60 ~ 100 ~ 170 ~ FE2 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.0 2