BC817 / BC818 NPN Epitaxial Silicon Transistor
November 2014
BC817 / BC818
NPN Epitaxial Silicon Transistor
Features
3
Switching and Amplifier Applications
Suitable for AF-Driver Stages and Low Power Output Stages
2
Complement to BC807 / BC808
SOT-23
1
1. Base 2. Emitter 3. Collector
(1)
Ordering Information
Part Number Marking Package Packing Method
BC81716MTF 8FA SOT-23 3L Tape and Reel
BC81725MTF 8FB SOT-23 3L Tape and Reel
BC81740MTF 8FC SOT-23 3L Tape and Reel
BC81816MTF 8GA SOT-23 3L Tape and Reel
BC81825MTF 8GB SOT-23 3L Tape and Reel
BC81840MTF 8GC SOT-23 3L Tape and Reel
Note:
1. Affix -16,-25,-40 means h classification. Affix -M means the matte type package. Affix -TF means the tape and
FE
reel type packing.
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
BC817 50
V Collector-Base Voltage V
CBO
BC818 30
BC817 45
V Collector-Emitter Voltage V
CEO
BC818 25
V Emitter-Base Voltage 5 V
EBO
I Collector Current (DC) 800 mA
C
T Junction Temperature 150 C
J
T Storage Temperature -65 to +150 C
STG
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 1 BC817 / BC818 NPN Epitaxial Silicon Transistor
(1)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
Power Dissipation 310 mW
P
D
Derate Above 25C2.48mW/C
R Thermal Resistance, Junction-to-Ambient 403 C/W
JA
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
(2)
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Typ. Max. Unit
BC817 45
Collector-Emitter Breakdown
BV I = 10 mA, I = 0 V
CEO C B
Voltage
BC818 25
BC817 50
Collector-Emitter Breakdown
BV I = 0.1 mA, V = 0 V
CES C BE
Voltage
BC818 30
BV Emitter-Base Breakdown Voltage I = 0.1 mA, I = 0 5 V
EBO E C
I Collector Cut-Off Current V = 25 V, V = 0 100 nA
CES CE BE
I Emitter Cut-Off Current V = 4 V, I = 0 100 nA
EBO EB C
h V = 1 V, I = 100 mA 100 630
FE1 CE C
DC Current Gain
h V = 1 V, I = 300 mA 60
FE2 CE C
V (sat) Collector-Emitter Saturation Voltage I = 500 mA, I = 50 mA 0.7 V
CE C B
V (on) Base-Emitter On Voltage V = 1 V, I = 300 mA 1.2 V
BE CE C
V = 5 V, I = 10 mA,
CE C
f Current Gain Bandwidth Product 100 MHz
T
f = 50 MHz
C Output Capacitance V = 10 V, f = 1 MHz 12 pF
ob CB
Note:
2. Pulse test: pulse width 300 s, duty cycle 2%
h Classification
FE
Classification 16 25 40
h 100 ~ 250 160 ~ 400 250 ~ 630
FE1
h 60 ~ 100 ~ 170 ~
FE2
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC817 / BC818 Rev. 1.1.0 2