General Purpose Transistors NPN Silicon BC818-40L, NSVBC818-40L Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COLLECTOR Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector Emitter Voltage V 25 V CEO Collector Base Voltage V 30 V 3 CBO Emitter Base Voltage V 5.0 V EBO 1 Collector Current Continuous I 500 mAdc C 2 THERMAL CHARACTERISTICS SOT23 CASE 318 Characteristic Symbol Max Unit STYLE 6 Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAMS Thermal Resistance, R 556 C/W JA JunctiontoAmbient Total Device Dissipation P D 6G M Alumina Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C 1 Thermal Resistance, R 417 C/W JA JunctiontoAmbient 6G = Specific Device Code M = Date Code* Junction and Storage Temperature T , T 55 to +150 C J stg = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. ORDERING INFORMATION Device Package Shipping BC81840LT1G SOT23 3000 / Tape & (PbFree) Reel NSVBC81840LT1G SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: September, 2020 Rev. 5 BC81840LT1/DBC81840L, NSVBC81840L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 25 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 30 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) 250 600 C CE (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1000 V = 1 V CE T = 25C J 100 10 0.1 1.0 10 100 1000 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain www.onsemi.com 2 h , DC CURRENT GAIN FE