X-On Electronics has gained recognition as a prominent supplier of BC847BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BDW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BDW1T1G ON Semiconductor

BC847BDW1T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BC847BDW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 100mA 50V Dual NPN
Datasheet: BC847BDW1T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0363 ea
Line Total: USD 108.9 
Availability - 1696530
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
145500
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0306
9000 : USD 0.0281
27000 : USD 0.0276
51000 : USD 0.0263
102000 : USD 0.0259
150000 : USD 0.0255
252000 : USD 0.0251
501000 : USD 0.0248

6646
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.1806
100 : USD 0.0966
401 : USD 0.042
1103 : USD 0.0406

1696530
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0363
9000 : USD 0.0304
24000 : USD 0.0241

197880
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

145500
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0343
9000 : USD 0.033
27000 : USD 0.0323
51000 : USD 0.0317
102000 : USD 0.0312

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the BC847BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The BC847BDW1T1G is a general-purpose low-power NPN bipolar junction transistor (BJT) produced by ON Semiconductor. It is intended for small-signal amplification and switching applications. The device is an enhancement-mode transistor with an NPN silicon epitaxial base and PNPN device structure. It has a maximum collector current of 200 mA and a maximum collector-emitter voltage of 70 volts. The device is lead (Pb)-free and RoHS compliant. The package type of the device is SC-89, which is a small outline plastic package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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