BC847BM3T5G Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT723 package which is designed for low power surface mount applications. BC847BM3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) 45 C CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) 50 C EB CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) 50 C EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) 6.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 290 450 C CE CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) BaseEmitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S