X-On Electronics has gained recognition as a prominent supplier of BC847CDXV6T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847CDXV6T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847CDXV6T1G ON Semiconductor

BC847CDXV6T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BC847CDXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 50V Dual NPN
Datasheet: BC847CDXV6T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.209 ea
Line Total: USD 0.21 
Availability - 314641
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
314641
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.209
10 : USD 0.1408
100 : USD 0.0726
1000 : USD 0.0583
4000 : USD 0.0517
8000 : USD 0.0418
24000 : USD 0.0407

785
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.1876
50 : USD 0.1274
100 : USD 0.1078
255 : USD 0.0672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847CDXV6T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847CDXV6T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) BC847CDXV6T1, SBC847CDXV6 45 C BC848CDXV6T1 30 Collector Emitter Breakdown Voltage V V (BR)CES 50 (I = 10 A, V = 0) BC847CDXV6T1, SBC847CDXV6 C EB BC848CDXV6T1 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) BC847CDXV6T1, SBC847CDXV6 50 C BC848CDXV6T1 30 Emitter Base Breakdown Voltage V V (BR)EBO 6.0 (I = 1.0 A) BC847CDXV6T1, SBC847CDXV6 E BC848CDXV6T1 5.0 Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE 270 (I = 10 A, V = 5.0 V) C CE (I = 2.0 mA, V = 5.0 V) 420 520 800 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 1.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k ,f = 1.0 kHz, BW = 200 Hz) 10 C CE S ORDERING INFORMATION Device Specific Marking Package Shipping BC847CDXV6T1G 4000 Units / Tape & Reel SOT563 SBC847CDXV6T1G 1G (Pb Free) BC847CDXV6T5G 8000 Units / Tape & Reel BC848CDXV6T1G SOT563 4000 Units / Tape & Reel 1L (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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