BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series www.onsemi.com Dual General Purpose Transistors PNP Duals SOT363/SC88 These transistors are designed for general purpose amplifier CASE 419B STYLE 1 applications. They are housed in the SOT363/SC88 which is designed for low power surface mount applications. (3) (2) (1) Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and Q Q 1 2 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit 6 CollectorEmitter Voltage V V CEO BC856, SBC856 65 3x M BC857, SBC857 45 BC858 30 1 CollectorBase Voltage V V CBO BC856, SBC856 80 BC857, SBC857 50 3x = Specific Device Code BC858 30 x = B, F, G, or L EmitterBase Voltage V 5.0 V (See Ordering Information) EBO M = Date Code Collector Current Continuous I 100 mAdc C = PbFree Package Collector Current Peak I 200 mAdc C (Note: Microdot may be in either location) THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Total Device Dissipation P 380 mW D Per Device 250 mW FR5 Board (Note 1) T = 25C A Derate Above 25C 3.0 mW/C Thermal Resistance, C/W R JA JunctiontoAmbient 328 Junction and Storage Temperature T , T 55 to +150 C J stg Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: August, 2016 Rev. 10 BC856BDW1T1/DBC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA) C BC856, SBC856 Series 65 BC857, SBC857 Series 45 BC858 Series 30 CollectorEmitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) C EB BC856, SBC856 Series 80 BC857B, SBC857B Only 50 BC858 Series 30 CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A) C BC856, SBC856 Series 80 BC857, SBC857 Series 50 30 BC858 Series EmitterBase Breakdown Voltage V V (BR)EBO (I = 1.0 A) E BC856, SBC856 Series 5.0 5.0 BC857, SBC857 Series BC858 Series 5.0 Collector Cutoff Current I CBO (V = 30 V) 15 nA CB (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) C CE BC856B, SBC856B, BC857B, SBC857B 150 BC857C, SBC857C, BC858C 270 (I = 2.0 mA, V = 5.0 V) C CE BC856B, SBC856B, BC857B, SBC857B 220 290 475 BC857C, SBC857C, BC858C 420 520 800 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF ob (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S www.onsemi.com 2