BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage V V CEO BC856, SBC856 65 BC857, SBC857 45 3 BC858, NSVBC858, BC859 30 Collector-Base Voltage V V CBO 1 BC856, SBC856 80 BC857, SBC857 50 2 BC858, NSVBC858, BC859 30 SOT23 (TO236) EmitterBase Voltage V 5.0 V CASE 318 EBO STYLE 6 Collector Current Continuous I 100 mAdc C Collector Current Peak I 200 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D xx M (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, R 556 C/W JA JunctiontoAmbient xx = Device Code Total Device Dissipation Alumina P D xx = (Refer to page 6) Substrate, (Note 2) T = 25C 300 mW A M = Date Code* Derate above 25C 2.4 mW/C = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, R 417 C/W JA JunctiontoAmbient *Date Code orientation and/or overbar may vary depending upon manufacturing location. Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package 1. FR5 = 1.0 x 0.75 x 0.062 in. dimensions section on page 6 of this data sheet. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 15 BC856ALT1/DBC856ALT1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BC856, SBC856 Series V 65 V (BR)CEO (I = 10 mA) BC857, SBC857 Series 45 C BC858, NSBVC858 BC859 Series 30 CollectorEmitter Breakdown Voltage BC856 S, SBC856eries V 80 V (BR)CES 50 (I = 10 A, V = 0) BC857A, SBC857A, BC857B, SBC857B Only C EB 30 BC858, NSVB858, BC859 Series CollectorBase Breakdown Voltage BC856, SBC856 Series V 80 V (BR)CBO (I = 10 A) BC857, SBC857 Series 50 C BC858, NSVBC858, BC859 Series 30 EmitterBase Breakdown Voltage BC856, SBC856 Series V 5.0 V (BR)EBO 5.0 (I = 1.0 A) BC857, SBC857 Series E 5.0 BC858, NSVBC858, BC859 Series Collector Cutoff Current (V = 30 V) I 15 nA CB CBO Collector Cutoff Current (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A h 90 FE 150 (I = 10 A, V = 5.0 V) BC856B, SBC856B, BC857B, SBC857B, C CE BC858B, NSVBC858B BC857C, SBC857C BC858C 270 (I = 2.0 mA, V = 5.0 V) BC856A, SBC856A, BC857A, 125 180 250 C CE SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF ob (V = 10 V, f = 1.0 MHz) CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series 10 BC859 Series 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2