General Purpose Transistors PNP Silicon BC856B, BC857B, BC858A These transistors are designed for general purpose amplifier applications. They are housed in the SC70/SOT323 which is www.onsemi.com designed for low power surface mount applications. COLLECTOR Features 3 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MAXIMUM RATINGS (T = 25C unless otherwise noted) A 3 Rating Symbol Value Unit SC70/SOT323 CASE 419 Collector-Emitter Voltage V V CEO 1 STYLE 3 BC856 65 2 BC857 45 BC858 30 Collector-Base Voltage V V CBO MARKING DIAGRAM BC856 80 BC857 50 BC858 30 EmitterBase Voltage V 5.0 V XX M EBO Collector Current Continuous I 100 mAdc C 1 Collector Current Peak (1 ms pulse) I 130 mA CM THERMAL CHARACTERISTICS XX = Specific Device Code M = Date Code* Characteristic Symbol Max Unit = PbFree Package (Note: Microdot may be in either location) Total Device Dissipation FR5 Board, P 150 mW D (Note 1) T = 25C *Date Code orientation may vary depending up- A on manufacturing location. Thermal Resistance, JunctiontoAmbi- R 883 C/W JA ent ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg See detailed ordering and shipping information on page 5 of Stresses exceeding those listed in the Maximum Ratings table may damage the this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2021 Rev. 5 BC856BWT1/DBC856B, BC857B, BC858A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage BC856 V 65 V (BR)CEO (I = 10 mA) BC857 45 C BC858 30 Collector Emitter Breakdown Voltage BC856 V 80 V (BR)CES (I = 10 A, V = 0) BC857 50 C EB BC858 30 Collector Base Breakdown Voltage BC856 V 80 V (BR)CBO (I = 10 A) BC857 50 C BC858 30 Emitter Base Breakdown Voltage BC856 V 5.0 V (BR)EBO (I = 1.0 A) BC857 5.0 E BC858 5.0 Collector Cutoff Current (V = 30 V) I 15 nA CB CBO Collector Cutoff Current (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain BC856A, BC585A h 90 FE 150 (I = 10 A, V = 5.0 V) BC856B, BC857B, BC858B C CE 270 BC857C (I = 2.0 mA, V = 5.0 V) BC856A, BC858A 125 180 250 C CE BC856B, BC857B, BC858B 220 290 475 BC857C 420 520 800 Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.65 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF ob (V = 10 V, f = 1.0 MHz) CB Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , C CE S f = 1.0 kHz, BW = 200 Hz) www.onsemi.com 2