X-On Electronics has gained recognition as a prominent supplier of BC858CLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC858CLT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC858CLT1G ON Semiconductor

BC858CLT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BC858CLT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100mA 30V PNP
Datasheet: BC858CLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0256 ea
Line Total: USD 76.8 
Availability - 46560
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 BC858CLT1G More Buying Options & Price Grid(s)

Availability Price Quantity
46560
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0256
6000 : USD 0.015
9000 : USD 0.0146
27000 : USD 0.014
51000 : USD 0.0135
102000 : USD 0.0129
252000 : USD 0.0126
501000 : USD 0.0125

59
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0281
200 : USD 0.0277
600 : USD 0.0273
3000 : USD 0.0261

3157
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.14
10 : USD 0.0938
50 : USD 0.0602
100 : USD 0.049
500 : USD 0.0336

26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

38014
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

38800
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

52380
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 14085
Multiples : 1
14085 : USD 0.0346

21277
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 532
Multiples : 1
532 : USD 0.0192
1000 : USD 0.0183
3000 : USD 0.0173
6000 : USD 0.0163
15000 : USD 0.0153

46560
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0347
6000 : USD 0.0203
9000 : USD 0.0198
27000 : USD 0.019
51000 : USD 0.0182

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC858CLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC858CLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The BC858CLT1G is a PNP 100mA 30V Bipolar Junction Transistor (BJT) manufactured by ON Semiconductor. This device is typically used for switching and amplifying applications. The PNP nature of this component makes it a negative (or reverse) bias device, as its collector voltage must be less than its emitter voltage for it to remain in a conducting state. The collector-current rating of this part is 100mA, and its collector-base voltage is rated at 30V. These operating parameters give the device a wider range of applications than other types of transistors. It is also designed to dissipate heat more effectively than other BJTs and has improved immunity to electrostatic discharge (ESD) events.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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ON SEMICONDUCTOR
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