BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT223 Package can be soldered using wave or reflow. CURRENT SURFACE MOUNT The formed leads absorb thermal stress during soldering, eliminating PNP TRANSISTORS the possibility of damage to the die COLLECTOR 2, 4 Device Marking: BCP53T1G = AH BCP5310T1G = AH10 1 BCP5316T1G = AH16 BASE S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 EMITTER 3 Qualified and PPAP Capable MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 Compliant 1 AYW 2 3 XXXXX MAXIMUM RATINGS (T = 25C unless otherwise noted) SOT223 C CASE 318E Rating Symbol Value Unit 1 STYLE 1 CollectorEmitter Voltage V 80 Vdc A = Assembly Location CEO Y = Year CollectorBase Voltage V 100 Vdc CBO W = Work Week XXXXX = Specific Device Code EmitterBase Voltage V 5.0 Vdc EBO = PbFree Package Collector Current I 1.5 Adc C (Note: Microdot may be in either location) Total Power Dissipation P D T = 25C (Note 1) 1.5 W A ORDERING INFORMATION Derate above 25C 12 mW/C Device Package Shipping Operating and Storage T , T 65 to +150 C J stg Temperature Range BCP53T1G SOT223 1000/Tape & Reel (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the SBCP5310T1G SOT223 1000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. BCP5310T1G SOT223 1000/Tape & Reel x 0.059 in. mounting pad for the collector lead min. 0.93 sq. in. (PbFree) SBCP5310T1G SOT223 1000/Tape & Reel THERMAL CHARACTERISTICS (PbFree) Characteristic Symbol Max Unit BCP5316T1G SOT223 1000/Tape & Reel Thermal Resistance, JunctiontoAmbient R 83.3 C/W (PbFree) JA (Surface Mounted) SBCP5316T1G SOT223 1000/Tape & Reel (PbFree) Lead Temperature for Soldering, T L 0.0625 from case 260 C BCP5316T3G SOT223 4000/Tape & Reel Time in Solder Bath 10 s (PbFree) NSVBCP5316T3G SOT223 4000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2018 Rev. 13 BCP53T1/DBCP53 Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 100 C E CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 80 C B CollectorEmitter Breakdown Voltage V Vdc (BR)CER (I = 100 Adc, R = 1.0 k ) 100 C BE EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 100 CB E EmitterBase Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) 100 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 mAdc, V = 2.0 Vdc) C CE All Part Types 25 (I = 150 mAdc, V = 2.0 Vdc) C CE BCP53, SBCP53 40 250 BCP5310, SBCP5310 63 160 BCP5316, SBCP5316, NSVBCP5316 100 250 (I = 500 mAdc, V = 2.0 Vdc) C CE All Part Types 25 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 2.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 35 MHz) 50 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2