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All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT223 package, which is designed for medium power surface mount www.onsemi.com applications. Features MEDIUM POWER NPN SILICON High Current: 1.0 A HIGH CURRENT TRANSISTOR The SOT223 package can be soldered using wave or reflow. The SURFACE MOUNT formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel COLLECTOR 2,4 Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel BASE PNP Complement is BCP53T1G 1 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 EMITTER 3 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 4 1 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) 3 C Rating Symbol Value Unit SOT223 CASE 318E CollectorEmitter Voltage V 80 Vdc CEO STYLE 1 CollectorBase Voltage V 100 Vdc CBO EmitterBase Voltage V 5 Vdc EBO MARKING DIAGRAM Collector Current I 1 Adc C Collector Current Peak (Note 1) I 2 Adc CM AYW XXXXX Total Power Dissipation P D T = 25C (Note 2) 1.5 W A Derate above 25C 12 mW/C 1 Operating and Storage T , T 65 to 150 C J stg XXXXX = Specific Device Code Temperature Range A = Assembly Location Y = Year THERMAL CHARACTERISTICS W = Work Week = PbFree Package Characteristic Symbol Max Unit (Note: Microdot may be in either location) Thermal Resistance, R 83.3 C/W JA JunctiontoAmbient (surface mounted) ORDERING INFORMATION Maximum Temperature for T L See detailed ordering, marking and shipping information in the Soldering Purposes 260 C package dimensions section on page 5 of this data sheet. Time in Solder Bath 10 Sec Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Reference SOA curve. 2. Device mounted on a FR4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in mounting pad for the collector lead = 0.93 sq in. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2018 Rev. 14 BCP56T1/D