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Collector Absolute Maximum Ratings * T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 80 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector current (DC) 500 mA C T , T Operating and Storage Junction Temperature Range -55 ~ +150 C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = 10 A, I = 0 80 V (BR)CBO C E V Collector-Emitter Breakdown Voltage I = 2mA, I = 0 60 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO E C I Collector Cutoff Current V = 20V, I = 0 100 nA CBO CB E V = 20V, I = 0, T = 100C 10 A CB E a On Characteristics h DC Current Gain I = 2.0mA, V = 5.0V 200 450 FE C CE V Collector-Emitter Saturation Voltage I = 10mA, I = 0.5mA 0.25 V CE(sat) C B V Base-Emitter On Voltage I = 2.0mA, V = 5.0V 0.55 0.7 V BE(on) C CE Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Ambient 357 C/W JA Device mounted on FR-4PCB 40mm 40mm 1.5mm 2004 Fairchild Semiconductor Corporation Rev. A, April 2004