BCW30 BCW30 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers 3 and switches requiring collector currents to 300mA. Sourced from process 68. 2 SOT-23 1 Mark: C2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage -32 V CEO V Collector-Emitter Voltage -32 V CES V Emitter-Base Voltage -5.0 V EBO I Collector current - Continuous -500 mA C T , T Junction and Storage Temperature -55 ~ +150 C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Base Breakdown Voltage I = -10 A, I = 0 -32 V (BR)CBO C E V Collector-Emitter Breakdown Voltage I = -2.0mA, I = 0 -32 V (BR)CEO C B V Collector-Emitter Breakdown Voltage I = -10 A, I = 0 -32 V (BR)CES C E V Emitter-Base Breakdown Voltage I = -10 A, I = 0 -5.0 V (BR)EBO C C I Collector Cutoff Current V = -32V, I = 0 -100 nA CBO CB E V = -32V, I = 0, T = +100C -10 A CB E A On Characteristics h DC Current Gain V = -5.0V, I = -2.0mA 215 500 FE CE C V Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE(sat) C B V Base-Emitter On Voltage V = -5.0V, I = -2.0mA -0.6 -0.7 V BE(on) CE C Small Signal Characteristics NF Noise Figure V = -5.0V, I = -200 A 10 dB CE C R = 2.0k , f = 1.0kHz S B = 200Hz W Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Ambient 357 C/W JA 2002 Fairchild Semiconductor Corporation Rev. B1, August 2002BCW30 Package Dimensions SOT-23 0.40 0.03 0.03~0.10 0.38 REF +0.05 0.40 0.03 0.12 0.023 0.96~1.14 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 0.97REF 1.30 0.10 0.45~0.60 2.40 0.10 0.20 MIN