BCW32LT1G General Purpose Transistors NPN Silicon Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COLLECTOR Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage V 32 Vdc CEO Collector-Base Voltage V 32 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO 3 Collector Current Continuous I 100 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the 1 device. If any of these limits are exceeded, device functionality should not be 2 assumed, damage may occur and reliability may be affected. SOT23 (TO236) CASE 318 THERMAL CHARACTERISTICS STYLE 6 Characteristic Symbol Value Unit Total Device Dissipation P mW D MARKING DIAGRAM (1) FR-5 Board 225 T = 25C A Derate above 25C 1.8 mW/C D2 M Thermal Resistance, R 556 C/W JA JunctiontoAmbient 1 Total Device Dissipation P 300 mW D (2) D2 = Device Code Alumina Substrate, T = 25C A M = Date Code* Derate above 25C 2.4 mW/C = PbFree Package Thermal Resistance, R 417 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C vary depending upon manufacturing location. J stg 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping BCW32LT1G SOT23 3000 / Tape & Reel (PbFree) NSVBCW32LT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: November, 2016 Rev. 4 BCW32LT1/DBCW32LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 32 Vdc (BR)CEO (I = 2.0 mAdc, V = 0) C EB CollectorBase Breakdown Voltage V 32 Vdc (BR)CBO (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I CBO (V = 32 Vdc, I = 0) 100 nAdc CB E (V = 32 Vdc, I = 0, T = 100C) 10 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mAdc, V = 5.0 Vdc) 200 450 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.25 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.70 C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C 4.0 pF obo (I = 0, V = 10 Vdc, f = 1.0 MHz) E CB Noise Figure NF 10 dB (I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (V = 5.0 Vdc, T = 25C) CE A 20 100 I = 1.0 mA BANDWIDTH = 1.0 Hz C BANDWIDTH = 1.0 Hz 50 I = 1.0 mA R R = 0 C S S 20 300 A 300 A 10 10 100 A 5.0 7.0 100 A 2.0 5.0 1.0 10 A 0.5 30 A 30 A 3.0 10 A 0.2 2.0 0.1 10 20 50 100 200 500 1 k 2 k 5 k 10 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current www.onsemi.com 2 e , NOISE VOLTAGE (nV) n I , NOISE CURRENT (pA) n