BCW33LT1G, SBCW33LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) MAXIMUM RATINGS CASE 31808 STYLE 6 Rating Symbol Value Unit Collector Emitter Voltage V 32 Vdc CEO COLLECTOR Collector Base Voltage V 32 Vdc CBO 3 Emitter Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 100 mAdc 1 C BASE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2 Total Device Dissipation FR5 Board P EMITTER D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C MARKING DIAGRAM Thermal Resistance, R 556 C/W JA JunctiontoAmbient D3 M Total Device Dissipation P D Alumina Substrate (Note 2), T = 25C 300 mW A Derate above 25C 2.4 mW/C D3 = Specific Device Code Thermal Resistance, R 417 C/W JA M = Date Code* JunctiontoAmbient = PbFree Package (Note: Microdot may be in either location) Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation and/or overbar may device. If any of these limits are exceeded, device functionality should not be vary depending upon manufacturing location. assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping BCW33LT1G SOT23 3,000/Tape & Reel (PbFree) SBCW33LT1G SOT23 3,000/Tape & Reel (PbFree) BCW33LT3G SOT23 10,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 6 BCW33LT1/DBCW33LT1G, SBCW33LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 2.0 mAdc, I = 0) 32 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 32 C B EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector Cutoff Current I CBO (V = 32 Vdc, I = 0) 100 nAdc CB E (V = 32 Vdc, I = 0, T = 100C) 10 Adc CB E A ON CHARACTERISTICS DC Current Gain hFE (I = 2.0 mAdc, V = 5.0 Vdc) 420 800 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.25 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.55 0.70 C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Noise Figure NF dB (V = 5.0 Vdc, I = 0.2 mAdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 CE C S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V + 3.0 V 10 < t < 500 s t 1 1 300 ns +10.9 V 275 275 +10.9 V DUTY CYCLE = 2% DUTY CYCLE = 2% 10 k 10 k 0 - 0.5 V <1.0 ns C < 4.0 pF* C < 4.0 pF* S S - 9.1 V 1N916 < 1.0 ns *Total shunt capacitance of test jig and connectors Figure 1. TurnOn Time Figure 2. TurnOff Time www.onsemi.com 2