X-On Electronics has gained recognition as a prominent supplier of BCW66GLT3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCW66GLT3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCW66GLT3G ON Semiconductor

BCW66GLT3G electronic component of ON Semiconductor
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Part No.BCW66GLT3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT GENRL TRANSISTOR
Datasheet: BCW66GLT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 614403
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
614403
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0781
100 : USD 0.0396
1000 : USD 0.0319
2500 : USD 0.0286
10000 : USD 0.0253
20000 : USD 0.022
50000 : USD 0.022
100000 : USD 0.0209

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCW66GLT3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCW66GLT3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCW66GLT1G, SBCW66GLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant SOT23 (TO236) CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 CollectorEmitter Voltage V 45 Vdc CEO 1 CollectorBase Voltage V 75 Vdc CBO BASE EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 800 mAdc C 2 EMITTER Collector Current Pulsed I 1200 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not MARKING DIAGRAM be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS EG M Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW D (Note 1), T = 25C A Derate above 25C 1.8 mW/C EG = Specific Device Code Thermal Resistance, M = Date Code* JunctiontoAmbient R 556 C/W JA = PbFree Package Total Device Dissipation Alumina P D (*Note: Microdot may be in either location) Substrate, (Note 2) T = 25C 300 mW A *Date Code orientation and/or overbar may Derate above 25C 2.4 mW/C vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 417 C/W JA ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. Device Package Shipping 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. BCW66GLT1G SOT23 3,000/Tape & Reel (PbFree) SBCW66GLT1G SOT23 3,000/Tape & Reel (PbFree) BCW66GLT3G SOT23 10,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 6 BCW66GLT1/DBCW66GLT1G, SBCW66GLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 45 Vdc C B (BR)CEO CollectorEmitter Breakdown Voltage (I = 10 Adc, V = 0) V 75 Vdc C EB (BR)CES EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current I CES (V = 45 Vdc, I = 0) 20 nAdc CE E (V = 45 Vdc, I = 0, T = 150C) 20 Adc CE E A Emitter Cutoff Current (V = 4.0 Vdc, I = 0) I 20 nAdc EB C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 100 Adc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 1.0 Vdc) 110 C CE (I = 100 mAdc, V = 1.0 Vdc) 160 400 C CE (I = 500 mAdc, V = 2.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.7 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) C CE Output Capacitance C 12 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 80 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Noise Figure NF 10 dB (V = 5.0 Vdc, I = 0.2 mAdc, R = 1.0 k , f = 1.0 kHz, BW = 200 Hz) CE C S SWITCHING CHARACTERISTICS TurnOn Time (I = I = 15 mAdc) t 100 ns B1 B2 on TurnOff Time (I = 150 mAdc, R = 150 ) t 400 ns C L off Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 1 1.2 I /I = 10 I /I = 10 C B C B 1.1 1.0 0.9 T = 55C A 0.8 0.1 0.7 0.6 T = 25C T = 25C A A 0.5 T = 150C A 0.4 0.3 T = 150C A T = 55C A 0.01 0.2 0.1 1 10 100 1000 0.1 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. Collector Emitter Saturation Voltage Figure 2. Base Emitter Saturation Voltage vs. vs. Collector Current Collector Current www.onsemi.com 2 V , COLLECTOREMITTER CE SATURATION VOLTAGE (V) V , BASEEMITTER BE(sat) SATURATION VOLTAGE (V)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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