BCW70LT1G General Purpose Transistor PNP Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE CollectorEmitter Voltage V 45 Vdc CEO EmitterBase Voltage V 5.0 Vdc EBO 2 Collector Current Continuous I 100 mAdc C EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board P 225 mW D (Note 1) T = 25C A 1 Derate above 25C 1.8 mW/C 2 Thermal Resistance, JunctiontoAmbient R 556 C/W JA SOT23 (TO236) Total Device Dissipation Alumina P 300 mW D CASE 318 Substrate, (Note 2) T = 25C A STYLE 6 Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA MARKING DIAGRAM Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. H2 M 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina 1 H2 = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BCW70LT1G SOT23 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1999 1 Publication Order Number: November, 2016 Rev. 4 BCW70LT1/DBCW70LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V (BR)CEO (I = 2.0 mAdc, I = 0) 45 Vdc C B CollectorEmitter Breakdown Voltage V (BR)CES (I = 100 Adc, V = 0) 50 Vdc C EB EmitterBase Breakdown Voltage V (BR)EBO (I = 10 Adc, I = 0) 5.0 Vdc E C Collector Cutoff Current I CBO (V = 20 Vdc, I = 0) 100 nAdc CB E (V = 20 Vdc, I = 0, T = 100C) 10 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 2.0 mAdc, V = 5.0 Vdc) 215 500 C CE CollectorEmitter Saturation Voltage V CE(sat) (I = 10 mAdc, I = 0.5 mAdc) 0.3 Vdc C B BaseEmitter On Voltage V BE(on) (I = 2.0 mAdc, V = 5.0 Vdc) 0.6 0.75 Vdc C CE SMALLSIGNAL CHARACTERISTICS Output Capacitance C obo (I = 0, V = 10 Vdc, f = 1.0 MHz) 7.0 pF E CB Noise Figure N F (I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 dB C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2