PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications www.onsemi.com Complement to BD135, BD137 and BD139 Respectively These are PbFree Devices ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Rating Symbol Max Unit CollectorBase Voltage V V CBO BD136 45 BD138 60 TO126 BD140 80 CASE 340AS 1 2 3 CollectorEmitter Voltage V V CEO 1 BD136 45 Emitter BD138 60 2 Collector BD140 80 3 Base EmitterBase Voltage V 5 V EBO Collector Current (DC) I 1.5 A C MARKING DIAGRAM Collector Current (Pulse) I 3.0 A CP Base Current I 0.5 A B Stresses exceeding those listed in the Maximum Ratings table may damage the YWW device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BD1XX THERMAL CHARACTERISTICS Y = Year Rating Symbol Max Unit WW = Work Week Collector Dissipation P 12.5 W C BD1XX = Specific Device Code XX = 36, 38, 40 Collector Dissipation (T = 25C) P 1.25 W A C Junction Temperature T 150 C J Storage Temperature Range T 55~150 C STG ORDERING INFORMATION Device Package Shipping 60 Units/ Tube BD13610STU BD13610S 500 Units/ Bulk Box 60 Units/ Tube BD13616STU BD13616S 500 Units/ Bulk Box TO126 (PbFree) 60 Units/ Tube BD13810STU 60 Units/ Tube BD13816STU 60 Units/ Tube BD14010STU BD14016STU 60 Units/ Tube BD14016S 500 Units/ Bulk Box Semiconductor Components Industries, LLC, 2000 1 Publication Order Number: November, 2019 Rev. 1 BD136/DBD136 Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) CollectorEmitter Sustaining Voltage (Note 1) I = 30 mA, I = 0 V CEO C B BD136 45 BD138 60 BD140 80 I Collector Cutoff Current V = 30 V, I = 0 0.1 A CBO CB E I Emitter Cutoff Current V = 5 V, I = 0 10 A EBO EB C DC Current Gain (Note 1) h V = 2 V, I = 5 mA 25 FE1 CE C h V = 2 V, I = 150 mA FE2 CE C BD13610/BD13810/BD14010 63 160 BD13616/BD13816/BD14016 100 250 h V = 2 V, I = 500 mA 25 FE3 CE C V (sat) CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.5 V CE C B (Note 1) V (on) BaseEmitter ON Voltage (Note 1) V = 2 V, I = 0.5 A 1 V BE CE C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: PW = 350 s, duty Cycle = 2% Pulsed www.onsemi.com 2