BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, mediumpower silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. www.onsemi.com Features High DC Current Gain 1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON These Devices are PbFree, Halogen Free/BFR Free and are RoHS 45, 60, 80 V, 12.5 W Compliant* COLLECTOR MAXIMUM RATINGS 2, 4 Rating Symbol Value Unit CollectorEmitter Voltage V Vdc CEO 3 BD136G 45 BASE BD138G 60 BD140G 80 1 CollectorBase Voltage V Vdc CBO EMITTER BD136G 45 BD138G 60 BD140G 100 EmitterBase Voltage V 5.0 Vdc EBO Collector Current I 1.5 Adc C TO225 Base Current I 0.5 Adc B CASE 7709 STYLE 1 Total Device Dissipation P D T = 25C 1.25 Watts A Derate above 25C 10 mW/C 1 2 3 Total Device Dissipation P D T = 25C 12.5 Watts C MARKING DIAGRAM Derate above 25C 100 mW/C Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range YWW Stresses exceeding those listed in the Maximum Ratings table may damage the BD1xxG device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = Year THERMAL CHARACTERISTICS WW = Work Week Characteristic Symbol Max Unit BD1xx = Device Code xx = 36, 38, 40 Thermal Resistance, JunctiontoCase R 10 C/W JC G = PbFree Package Thermal Resistance, JunctiontoAmbient R 100 C/W JA ORDERING INFORMATION Device Package Shipping BD136G TO225 500 Units/Box (PbFree) BD138G TO225 500 Units/Box (PbFree) *For additional information on our PbFree strategy and soldering details, please BD140G TO225 500 Units/Box download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2013 Rev. 16 BD136G/DBD136G, BD138G, BD140G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 1) BV Vdc CEO (I = 0.03 Adc, I = 0) C B 45 BD136G 60 BD138G 80 BD140G Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.1 CB E 10 (V = 30 Vdc, I = 0, T = 125 C) CB E C Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 BE C DC Current Gain h * FE (I = 0.005 A, V = 2 V) 25 C CE (I = 0.15 A, V = 2 V) 40 250 C CE (I = 0.5 A, V = 2 V) 25 C CE CollectorEmitter Saturation Voltage (Note 1) V * Vdc CE(sat) (I = 0.5 Adc, I = 0.05 Adc) 0.5 C B BaseEmitter On Voltage (Note 1) V * Vdc BE(on) (I = 0.5 Adc, V = 2.0 Vdc) 1 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 1000 0.5 V = 2 V CE I /I = 10 C B 55C 0.4 150C 25C 0.3 25C 55C 150C 100 0.2 0.1 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage www.onsemi.com 2 h , DC CURRENT GAIN FE V , COLLECTOREMITTER CE(sat) SATURATION VOLTAGE (V)