BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors www.onsemi.com Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS Features COMPLEMENTARY High Current Gain Bandwidth Product SILICON Compact TO220 AB Package 3 AMP Epoxy Meets UL94 V0 0.125 in 80100 VOLTS These Devices are PbFree and are RoHS Compliant* 40 WATTS MAXIMUM RATINGS COMPLEMENTARY BD241C COLLECTOR 2,4 Rating Symbol BD242B BD242C Unit COLLECTOR 2,4 CollectorEmitter Voltage V 80 100 Vdc CEO CollectorEmitter Voltage V 90 115 Vdc CES 1 1 BASE BASE EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 3.0 Adc C EMITTER 3 EMITTER 3 Collector Current Peak I 5.0 Adc CM Base Current I 1.0 Adc B MARKING 4 DIAGRAM Total Device Dissipation P D T = 25C 40 W C Derate above 25C 0.32 W/C TO220 Operating and Storage T , T 65 to +150 C J stg Junction Temperature Range CASE 221A AYWW STYLE 1 BD24xxG ESD Human Body Model HBM 3B V ESD Machine Model MM C V 1 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be BD24xx = Device Code assumed, damage may occur and reliability may be affected. xx = 1C, 2B, or 2C A = Assembly Location THERMAL CHARACTERISTICS Y = Year Characteristic Symbol Max Unit WW = Work Week G = PbFree Package Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA Thermal Resistance, JunctiontoCase R 3.125 C/W JC ORDERING INFORMATION Device Package Shipping BD241CG TO220 50 Units/Rail (PbFree) BD242BG TO220 50 Units/Rail (PbFree) BD242CG TO220 50 Units/Rail (PbFree) For information on tape and reel specifications, *For additional information on our PbFree strategy and soldering details, please including part orientation and tape sizes, please download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specification Reference Manual, SOLDERRM/D. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 10 BD241C/DBD241C (NPN), BD242B (PNP), BD242C (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO (I = 30 mAdc, I = 0) BD242B 80 C B BD241C, BD242C 100 Collector Cutoff Current I mAdc CEO (V = 50 Vdc, I = 0) BD242B 0.3 CE B (V = 60 Vdc, I = 0) BD241C, BD242C CE B Collector Cutoff Current I Adc CES (V = 80 Vdc, V = 0) BD242B 200 CE EB (V = 100 Vdc, V = 0) BD241C, BD242C CE EB Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 Adc, V = 4.0 Vdc) C CE 25 (I = 3.0 Adc, V = 4.0 Vdc) C CE 10 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 3.0 Adc, I = 0.6 Adc) 1.2 C B BaseEmitter On Voltage V Vdc BE(on) (I = 3.0 Adc, V = 4.0 Vdc) 1.8 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE test SmallSignal Current Gain h fe (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T , CASE TEMPERATURE (C) C Figure 1. Power Derating www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D