BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general purpose amplifier and switching applications. www.onsemi.com Features 6 AMPERE High Current Gain Bandwidth Product POWER TRANSISTORS These Devices are PbFree and are RoHS Compliant* COMPLEMENTARY SILICON 80100 VOLTS MAXIMUM RATINGS 65 WATTS Rating Symbol Value Unit PNP NPN CollectorEmitter Voltage V Vdc CEO COLLECTOR 2, 4 BD243B, BD244B 80 COLLECTOR 2, 4 BD243C, BD244C 100 CollectorBase Voltage V Vdc CB 1 1 BD243B, BD244B 80 BASE BASE BD243C, BD244C 100 EmitterBase Voltage V 5.0 Vdc EB EMITTER 3 EMITTER 3 Collector Current Continuous I 6 Adc C 4 Collector Current Peak I 10 Adc CM Base Current I 2.0 Adc B TO220 Total Device Dissipation P D CASE 221A T = 25C 65 W C STYLE 1 Derate above 25C 0.52 W/C Operating and Storage Junction T , T 65 to +150 C J stg 1 Temperature Range 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MARKING DIAGRAM assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS BD24xy = Device Code x = 3 or 4 Characteristics Symbol Max Unit y = B or C BD24xyG Thermal Resistance, JunctiontoCase R 1.92 C/W JC A = Assembly Location Y = Year AY WW WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping BD243BG TO220 50 Units / Rail (PbFree) BD243CG TO220 50 Units / Rail (PbFree) BD244BG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please BD244CG TO220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 15 BD243B/DBD243B, BD243C (NPN), BD244B, BD244C (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 30 mAdc, I = 0) C B BD243B, BD244B 80 BD243C, BD244C 100 Collector Cutoff Current I mAdc CEO (V = 60 Vdc, I = 0) CE B BD243B, BD243C, BD244B, BD244C 0.7 Collector Cutoff Current I Adc CES (V = 80 Vdc, V = 0) CE EB BD243B, BD244B 400 (V = 100 Vdc, V = 0) CE EB BD243C, BD244C 400 Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 1.0 BE C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.3 Adc, V = 4.0 Vdc) 30 C CE (I = 3.0 Adc, V = 4.0 Vdc) 15 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 6.0 Adc, I = 1.0 Adc) 1.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 6.0 Adc, V = 4.0 Vdc) 2.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (Note 2) f MHz T (I = 500 mAdc, V = 10 Vdc, f = 1.0 MHz) 3.0 C CE test SmallSignal Current Gain h fe (I = 0.5 Adc, V = 10 Vdc, f = 1.0 kHz) 20 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulsewidth 300 s, Duty Cycle 2.0%. 2. f = h f T fe test 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T , CASE TEMPERATURE (C) C Figure 1. Power Derating www.onsemi.com 2 P , POWER DISSIPATION (WATTS) D