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X-On Electronics has gained recognition as a prominent supplier of BD676G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BD676G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

BD676G ON Semiconductor

BD676G electronic component of ON Semiconductor
BD676G ON Semiconductor
BD676G Darlington Transistors
BD676G  Semiconductors

Images are for reference only
See Product Specifications
Part No. BD676G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 4A 45V 40W PNP
Datasheet: BD676G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.5067
N/A

Obsolete
0
MOQ : 1500
Multiples : 1500
1500 : USD 0.3564
N/A

Obsolete
0
MOQ : 932
Multiples : 932
932 : USD 0.4371
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.966
10 : USD 0.972
25 : USD 0.6703
100 : USD 0.5647
500 : USD 0.4727
1000 : USD 0.39
2000 : USD 0.3786
N/A

Obsolete
0
MOQ : 2
Multiples : 1
2 : USD 0.708
6 : USD 0.373
79 : USD 0.3518
N/A

Obsolete
0
MOQ : 125
Multiples : 1
125 : USD 0.4995
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BD676G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BD676G and other electronic components in the Darlington Transistors category and beyond.

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BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) BV Vdc CEO (I = 50 mAdc, I = 0) C B BD676G, BD676AG 45 BD678G, BD678AG 60 BD680G, BD680AG 80 BD682G, BD682TG 100 Collector Cutoff Current I Adc CEO (V = Half Rated V , I = 0) 500 CE CEO B Collector Cutoff Current I mAdc CBO (V = Rated BV , I = 0) 0.2 CB CEO E (V = Rated BV . I = 0, T = 100C) 2.0 CB CEO E C Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain (Note 1) h FE (I = 1.5 Adc, V = 3.0 Vdc) C CE BD676G, BD678G, BD680G, BD682G 750 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 750 CollectorEmitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 1.5 Adc, I = 30 mAdc) C B BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, I = 40 mAdc) C B BD676AG, BD678AG, BD680AG 2.8 BaseEmitter On Voltage (Note 1) V Vdc BE(on) (I = 1.5 Adc, V = 3.0 Vdc) C CE BD678G, BD680G, BD682G 2.5 (I = 2.0 Adc, V = 3.0 Vdc) C CE BD676AG, BD678AG, BD680AG 2.5 DYNAMIC CHARACTERISTICS SmallSignal Current Gain h fe (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz) 1.0 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 50 5.0 45 40 2.0 35 1.0 30 BONDING WIRE LIMIT 25 THERMAL LIMIT at T = 25C 0.5 C SECONDARY BREAKDOWN LIMIT 20 15 0.2 BD676, 676A 10 BD678, 678A T = 25C C 0.1 BD680, 680A 5.0 BD682 0 0.05 15 30 45 60 75 90 105 120 135 150 165 1.0 2.0 5.0 10 20 50 100 T , CASE TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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