BSP16T1G High Voltage Transistors PNPSilicon Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS BSP16T1G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Max Unit OFFCHARACTERISTICS Collector--Emitter Breakdown Voltage V Vdc (BR)CEO (I =--50mAdc,I =0,L=25mH) --300 -- C B Collector--Base Breakdown Voltage V Vdc (BR)CBO (I = --100 mAdc, I =0) --300 -- C E Collector--Emitter Cutoff Current I mAdc CES (V = --250 Vdc, I =0) -- --50 CE B Collector--Base Cutoff Current I mAdc CBO (V = --280 Vdc, I =0) -- --1.0 CB E Emitter--Base Cutoff Current I mAdc EBO (V =--6.0Vdc,I =0) -- --20 EB C ONCHARACTERISTICS DC Current Gain h FE (V =--10Vdc,I =--50mAdc) 30 120 -- CE C Collector-Emitter Saturation Voltage V Vdc CE(sat) (I =--50mAdc,I =--5.0mAdc) -- --2.0 C B DYNAMICCHARACTERISTICS Current Gain -- Bandwidth Product f MHz T (V =--10Vdc,I =--10mAdc,f=30MHz) 15 -- CE C Collector--Base Capacitance C pF obo (V =--10Vdc,I =0,f=1.0MHz) -- 15 CB E