X-On Electronics has gained recognition as a prominent supplier of BSP16T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSP16T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSP16T1G ON Semiconductor

BSP16T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BSP16T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 300 V 100 mA 15MHz 1.5 W Surface Mount SOT-223 (TO-261)
Datasheet: BSP16T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4466 ea
Line Total: USD 0.45 
Availability - 4742
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.624
10 : USD 0.4173
100 : USD 0.2209
1000 : USD 0.1994
2000 : USD 0.1565
10000 : USD 0.1452
25000 : USD 0.131
50000 : USD 0.1266

4742
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4466
10 : USD 0.2981
100 : USD 0.1661
1000 : USD 0.1529
2000 : USD 0.1243
10000 : USD 0.1243
25000 : USD 0.1188

2190
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.602
10 : USD 0.462
81 : USD 0.2128
221 : USD 0.2016
1000 : USD 0.1932

6790
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2942
Multiples : 1
2942 : USD 0.1658

7748
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2942
Multiples : 1
2942 : USD 0.1658

4850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1634

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP16T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP16T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BSP16T1G High Voltage Transistors PNPSilicon Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS BSP16T1G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Max Unit OFFCHARACTERISTICS Collector--Emitter Breakdown Voltage V Vdc (BR)CEO (I =--50mAdc,I =0,L=25mH) --300 -- C B Collector--Base Breakdown Voltage V Vdc (BR)CBO (I = --100 mAdc, I =0) --300 -- C E Collector--Emitter Cutoff Current I mAdc CES (V = --250 Vdc, I =0) -- --50 CE B Collector--Base Cutoff Current I mAdc CBO (V = --280 Vdc, I =0) -- --1.0 CB E Emitter--Base Cutoff Current I mAdc EBO (V =--6.0Vdc,I =0) -- --20 EB C ONCHARACTERISTICS DC Current Gain h FE (V =--10Vdc,I =--50mAdc) 30 120 -- CE C Collector-Emitter Saturation Voltage V Vdc CE(sat) (I =--50mAdc,I =--5.0mAdc) -- --2.0 C B DYNAMICCHARACTERISTICS Current Gain -- Bandwidth Product f MHz T (V =--10Vdc,I =--10mAdc,f=30MHz) 15 -- CE C Collector--Base Capacitance C pF obo (V =--10Vdc,I =0,f=1.0MHz) -- 15 CB E

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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