BUX85G Switchmode NPN Silicon Power Transistors The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. www.onsemi.com Features These Devices are PbFree and are RoHS Compliant* 2.0 AMPERES POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS 450 VOLTS, 50 WATTS Rating Symbol Value Unit CollectorEmitter Voltage V 450 Vdc CEO(sus) COLLECTOR 2,4 CollectorEmitter Voltage V 1000 Vdc CES EmitterBase Voltage V 5 Vdc EBO 1 Collector Current Continuous I 2 Adc C BASE Collector Current Peak (Note 1) I 3.0 Adc CM 3 Base Current Continuous I 0.75 Adc B EMITTER Base Current Peak (Note 1) I 1.0 Adc BM Reverse Base Current Peak I 1 Adc BM 4 Total Device Dissipation T = 25 C P 50 W C D Derate above 25C 0.4 W/ C TO220 Operating and Storage Junction T , T 65 to +150 C J stg CASE 221A Temperature Range STYLE 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. 2 3 THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R 2.5 C/W JC Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA BUX85G Maximum Lead Temperature for Soldering T 275 C L Purposes 1/8 from Case for 5 Seconds AY WW BUX85 = Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping *For additional information on our PbFree strategy and soldering details, please BUX85G TO220 50 Units / Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2015 Rev. 18 BUX85/DBUX85G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage V 450 Vdc CEO(sus) (I = 100 mAdc, (L = 25 mH) See Figure 1 C Collector Cutoff Current I mAdc CES (V = Rated Value) CES 0.2 (V = Rated Value, T = 125 C) CES C 1.5 Emitter Cutoff Current I 1 mAdc EBO (V = 5 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 2) DC Current Gain h 30 50 FE (I = 0.1 Adc, V = 5 V) C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.3 Adc, I = 30 mAdc) C B 0.8 (I = 1 Adc, I = 200 mAdc) C B 1 BaseEmitter Saturation Voltage V 1.1 Vdc BE(sat) (I = 1 Adc, I = 0.2 Adc) C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 4 MHz T (I = 500 mAdc, V = 1 0 Vdc, f = 1 MHz) C CE SWITCHING CHARACTERISTICS Turnon Time t 0.3 0.5 s on V = 250 Vdc, I = 1 A CC C Storage Time I = 0.2 A, I = 0.4 A t 2 3.5 s B1 B2 s See Figure 2 Fall Time t 0.3 s f Fall Time Same above cond. at T = 95 C t 1.4 s f C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: PW = 300 s, Duty Cycle 2%. www.onsemi.com 2