BUZ11 Data Sheet June 1999 File Number 2253.2 30A, 50V, 0.040 Ohm, N-Channel Power Features MOSFET 30A, 50V /Title This is an N-Channel enhancement mode silicon gate power r = 0.040 DS(ON) (BUZ1 eld effect transistor designed for applications such as SOA is Power Dissipation Limited 1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching /Sub- transistors requiring high speed and low gate drive power. ject Linear Transfer Characteristics This type can be operated directly from integrated circuits. (30A, High Input Impedance Formerly developmental type TA9771. 50V, Majority Carrier Device 0.040 Ordering Information Related Literature Ohm, - TB334 Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND N- Components to PC Boards BUZ11 TO-220AB BUZ11 Chan- NOTE: When ordering, use the entire part number. Symbol nel Power D MOS- FET) G /Autho r () S /Key- words (Inter- sil Packaging Corpo- JEDEC TO-220AB ration, SOURCE N- DRAIN GATE Chan- nel DRAIN (FLANGE) Power MOS- FET, TO- 220AB ) /Cre- ator () /DOCI NFO pdf- mark 2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C BUZ11 UNITS Drain to Source Breakdown Voltage (Note 1) .V 50 V DS Drain to Gate Voltage (R = 20k ) (Note 1) . V 50 V GS DGR o Continuous Drain Current T = 30 C . I 30 A C D Pulsed Drain Current (Note 3) . I 120 A DM Gate to Source Voltage V 20 V GS Maximum Power Dissipation .P 75 W D o Linear Derating Factor 0.6 W/ C o Operating and Storage Temperature T T -55 to 150 C J, STG DIN Humidity Category - DIN 40040 . E IEC Climatic Category - DIN IEC 68-1 55/150/56 Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s . T 300 C L o Package Body for 10s, See Techbrief 334 . T 260 C pkg CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied. NOTE: o o 1. T = 25 C to 125 C. J o Electrical Specications T = 25 C, Unless Otherwise Specied C PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV I = 250 A, V = 0V 50 - - V DSS D GS Gate Threshold Voltage V V = V , I = 1mA (Figure 9) 2.1 3 4 V GS(TH) GS DS D o Zero Gate Voltage Drain Current I T = 25 C, V = 50V, V = 0V - 20 250 A DSS J DS GS o T = 125 C, V = 50V, V = 0V - 100 1000 A J DS GS Gate to Source Leakage Current I V = 20V, V = 0V - 10 100 nA GSS GS DS Drain to Source On Resistance (Note 2) r I = 15A, V = 10V (Figure 8) - 0.03 0.04 DS(ON) D GS Forward Transconductance (Note 2) g V = 25V, I = 15A (Figure 11) 4 8 - S fs DS D Turn-On Delay Time t V = 30V, I 3A, V = 10V, R = 50, -30 45 ns d(ON) CC D GS GS R = 10 L Rise Time t - 70 110 ns r Turn-Off Delay Time t - 180 230 ns d(OFF) Fall Time t - 130 170 ns f Input Capacitance C V = 25V, V = 0V, f = 1MHz (Figure 10) - 1500 2000 pF ISS DS GS Output Capacitance C - 750 1100 pF OSS Reverse Transfer Capacitance C - 250 400 pF RSS o Thermal Resistance Junction to Case R 1.67 C/W JC o Thermal Resistance Junction to Ambient R 75 C/W JA Source to Drain Diode Specications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS o Continuous Source to Drain Current I T = 25C--30A SD C o Pulsed Source to Drain Current I T = 25 C - - 120 A SDM C o Source to Drain Diode Voltage V T = 25 C, I = 60A, V = 0V - 1.7 2.6 V SD J SD GS o Reverse Recovery Time t T = 25 C, I = 30A, dI /dt = 100A/ s, - 200 - ns rr J SD SD V = 30V R Reverse Recovery Charge Q - 0.25 - C RR NOTES: 2. Pulse Test: Pulse width 300ms, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2001 Fairchild Semiconductor Corporation BUZ1 Rev. A