CAT25M01 EEPROM Serial 1-Mb SPI Description The CAT25M01 is a EEPROM Serial 1Mb SPI device internally organized as 128Kx8 bits. This features a 256byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device www.onsemi.com is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAT25M01 device. The device features software and hardware write protection, including partial as well as full array protection. TSSOP8 SOIC8 SOIC8 WIDE OnChip ECC (Error Correction Code) makes the device suitable Y SUFFIX V SUFFIX X SUFFIX for high reliability applications. CASE 948AL CASE 751BD CASE 751BE Features 10 MHz SPI Compatible PIN CONFIGURATION 1.8 V to 5.5 V Supply Voltage Range V CS 1 CC SPI Modes (0,0) & (1,1) SO HOLD 256byte Page Write Buffer SCK WP V SI SS Additional Identification Page with Permanent Write Protection Selftimed Write Cycle SOIC (V, X), TSSOP (Y) Hardware and Software Protection (Top View) Block Write Protection Protect 1/4, 1/2 or Entire EEPROM Array Low Power CMOS Technology PIN FUNCTION 1,000,000 Program/Erase Cycles Pin Name Function 100 Year Data Retention CS Chip Select Industrial and Extended Temperature Range SO Serial Data Output 8 lead SOIC and TSSOP Packages WP Write Protect This Device is PbFree, Halogen Free/BFR Free and is RoHS V Ground SS Compliant SI Serial Data Input V CC SCK Serial Clock HOLD Hold Transmission Input SI V Power Supply CC CS CAT25M01 SO WP HOLD ORDERING INFORMATION SCK See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. V SS Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2018 Rev. 3 CAT25M01/DCAT25M01 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C CC 4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte has to be written, 4 bytes (including the ECC bits) are reprogrammed. It is recommended to write by multiple of 4 bytes in order to benefit from the maximum number of write cycles. Table 3. D. C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, SO open / V = 1.8 V, f = 5 MHz 1.2 mA CCR CC SCK (Read Mode) 40C to +85C V = 2.5 V, f = 10 MHz 1.8 mA CC SCK V = 5.5 V, f = 10 MHz 3 mA CC SCK Read, SO open / 2.5 V < V < 5.5 V, 3 mA CC 40C to +125C f = 10 MHz SCK I Supply Current Write, CS = V / 1.8 V < V < 5.5 V 3 mA CCW CC CC (Write Mode) 40C to +85C Write, CS = V / 2.5 V < V < 5.5 V 3 mA CC CC 40C to +125C I Standby Current V = GND or V , T = 40C to +85C 1 A SB1 IN CC A CS = V , WP = V , CC CC HOLD = V , CC T = 40C to +125C 3 A V = 5.5 V CC I Standby Current V = GND or V , T = 40C to +85C 3 A SB2 IN CC A CS = V , WP = GND, CC HOLD = GND, T = 40C to +125C 5 A A V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V 2 2 A LO CC Current V = GND or V OUT CC V Input Low Voltage V 2.5 V 0.5 0.3V V IL1 CC CC V Input High Voltage V 2.5 V 0.7V V + 0.5 V IH1 CC CC CC V Input Low Voltage V < 2.5 V 0.5 0.25V V IL2 CC CC V Input High Voltage V < 2.5 V 0.75V V + 0.5 V IH2 CC CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V 2.5 V, I = 1.6 mA V 0.8V V OH1 CC OH CC V Output Low Voltage V < 2.5 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V < 2.5 V, I = 100 A V 0.2V V OH2 CC OH CC www.onsemi.com 2