DATA SHEET www.onsemi.com Complementary Silicon 10 AMP COMPLEMENTARY Power Transistors SILICON POWER TRANSISTORS 60, 80 VOLTS D44H Series (NPN), NPN PNP D45H Series (PNP) COLLECTOR 2, 4 COLLECTOR 2, 4 These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as 1 1 output or driver stages in applications such as switching regulators, BASE BASE converters and power amplifiers. EMITTER 3 EMITTER 3 Features Low CollectorEmitter Saturation Voltage MARKING 4 Fast Switching Speeds DIAGRAM Complementary Pairs Simplifies Designs These Devices are PbFree and are RoHS Compliant* MAXIMUM RATINGS TO220 D4xHyyG CASE 221A Rating Symbol Value Unit AYWW STYLE 1 1 CollectorEmitter Voltage V Vdc CEO 2 D44H8, D45H8 60 3 D44H11, D45H11 80 Emitter Base Voltage V 5.0 Vdc EB D4xHyy = Device Code x = 4 or 5 Collector Current Continuous I 10 Adc C yy = 8 or 11 Collector Current Peak (Note 1) I 20 Adc CM A = Assembly Location Y = Year Total Power Dissipation P W D T = 25C WW = Work Week 70 C T = 25C G=PbFree Package A 2.0 Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. D44H8G TO220 50 Units/Rail 1. Pulse Width 6.0 ms, Duty Cycle 50%. (PbFree) THERMAL CHARACTERISTICS D44H11G TO220 50 Units/Rail (PbFree) Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 1.8 C/W D45H8G TO220 50 Units/Rail JC (PbFree) Thermal Resistance, JunctiontoAmbient R 62.5 C/W JA D45H11G TO220 50 Units/Rail Maximum Lead Temperature for Soldering T 275 C L (PbFree) Purposes: 1/8 from Case for 5 Seconds *For additional information on our PbFree strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2021 Rev. 14 D44H/DD44H Series (NPN), D45H Series (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage D44H8, D45H8 V 60 Vdc CEO(sus) (I = 30 mAdc, I = 0 Adc) D44H11, D45H11 80 C B Collector Cutoff Current (V = Rated V , V = 0) I 10 A CE CEO BE CES Emitter Cutoff Current (V = 5.0 Vdc) I 10 A EB EBO ON CHARACTERISTICS DC Current Gain h FE (V = 1.0 Vdc, I = 2.0 Adc) 60 CE C (V = 1.0 Vdc, I = 4.0 Adc) 40 CE C CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8.0 Adc, I = 0.4 Adc) C B 1.0 BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 8.0 Adc, I = 0.8 Adc) C B DYNAMIC CHARACTERISTICS Collector Capacitance C pF cb (V = 10 Vdc, f = 1.0 MHz) D44H Series 90 CB test D45H Series 160 Gain Bandwidth Product f MHz T (I = 0.5 Adc, V = 10 Vdc, f = 20 MHz) D44H Series C CE 50 D45H Series 40 SWITCHING TIMES Delay and Rise Times t + t ns d r (I = 5.0 Adc, I = 0.5 Adc) D44H Series C B1 300 D45H Series 135 Storage Time t ns s (I = 5.0 Adc, I = I = 0.5 Adc) D44H Series C B1 B2 500 D45H Series 500 Fall Time t ns f (I = 5.0 Adc, I = 102 = 0.5 Adc) D44H Series C B1 140 D45H Series 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2