D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for highspeed switching applications, such as switching regulators and www.onsemi.com high frequency inverters. The devices are also wellsuited for drivers for high power switching circuits. 15 A COMPLEMENTARY SILICON Features POWER TRANSISTORS Fast Switching 80 V, 83 W Key Parameters Specified 100C Low CollectorEmitter Saturation Voltage PNP NPN Complementary Pairs Simplify Circuit Designs COLLECTOR 2, 4 COLLECTOR 2, 4 These Devices are PbFree and are RoHS Compliant* 1 1 MAXIMUM RATINGS BASE BASE Rating Symbol Value Unit EMITTER 3 EMITTER 3 CollectorEmitter Voltage V 80 Vdc CEO CollectorEmitter Voltage V 100 Vdc 4 CEV Emitter Base Voltage V 7.0 Vdc EB Collector Current Continuous I 15 Adc C TO220 CASE 221A Collector Current Peak (Note 1) I 20 Adc CM STYLE 1 Total Power Dissipation P D T = 25C 83 W C 1 2 Derate above 25C 0.67 W/C 3 Operating and Storage Junction T , T 55 to 150 C J stg MARKING DIAGRAM Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width 6.0 ms, Duty Cycle 50%. D4xVH10G THERMAL CHARACTERISTICS AYWW Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R 1.5 C/W JC Thermal Resistance, Junction to Ambient 62.5 C/W R JA x = 4 or 5 T 275 C Maximum Lead Temperature for Soldering A = Assembly Location L Purposes: 1/8 from Case for 5 Seconds Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping D44VH10G TO220 50 Units/Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please D45VH10G TO220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (PbFree) Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 8 D44VH/DD44VH10 (NPN), D45VH10 (PNP) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) V Vdc CEO(sus) (I = 25 mAdc, I = 0) 80 C B CollectorEmitter Cutoff Current I Adc CEV (V = Rated V , V = 4.0 Vdc) CE CEV BE(off) 10 (V = Rated V , V = 4.0 Vdc, T = 100C) CE CEV BE(off) C 100 Emitter Base Cutoff Current I Adc EBO (V = 7.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 2.0 Adc, V = 1.0 Vdc) 35 C CE (I = 4.0 Adc, V = 1.0 Vdc) 20 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8.0 Adc, I = 0.4 Adc) C B D44VH10 0.4 (I = 8.0 Adc, I = 0.8 Adc) C B D45VH10 1.0 (I = 15 Adc, I = 3.0 Adc, T = 100C) C B C D44VH10 0.8 D45VH10 1.5 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 8.0 Adc, I = 0.4 Adc) C B D44VH10 1.2 (I = 8.0 Adc, I = 0.8 Adc) C B D45VH10 1.0 (I = 8.0 Adc, I = 0.4 Adc, T = 100C) C B C D44VH10 1.1 (I = 8.0 Adc, I = 0.8 Adc, T = 100C) C B C D45VH10 1.5 DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 0.1 Adc, V = 10 Vdc, f = 20 MHz) 50 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB C test D44VH10 120 D45VH10 275 SWITCHING CHARACTERISTICS Delay Time t 50 ns d Rise Time t 250 r (V = 20 Vdc, I = 8.0 Adc, I = I = 0.8 Adc) CC C B1 B2 Storage Time t 700 s Fall Time t 90 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2