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Emitter Absolute Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage -60 V CEO I Collector Current - Continuous -4.0 A C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Electrical Characteristics T =25 C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = -100mA, I = 0 -60 V (BR)CEO C B I Collector-Emitter-(Base)Short V = -70V, I = 0 -10 A CES CE E I Collector-Emitter-(Base)Open V = -55V, I = 0 -100 A CEO CE E I Emitter-Base Current V = -5.0V, I = 0 -100 A EBO EB B On Characteristics V = -1.0V, I = -0.2A 40 120 CE C h DC Current Gain FE V = -1.0V, I = -2.0A 20 CE C V Collector-Emitter Saturation Voltage I = -1.0A, I = -50mA -0.5 V CE (sat) C B V Base-Emitter Saturation Voltage I = -1.0A, I = -100mA -1.3 V BE (sat) C B Small Signal Characteristics C Output Capacitance V = -10V, f = 1.0MHz 125 pF ob CB f Current Gain Bandwidth Product I = -20mA, V = -4.0V 32 MHz T C CE t , Delay Time 59 d t ns ON I = -1.0A, C t , Rise Time 502 r I = I = -0.1A B1 B2 t , Storage Time 474 s V = -30V, tp = 25 s t ns CC OFF t , Fall Time 59 f Thermal Characteristics T =25 C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 60 W D Derate above 25 C 480 mW/C R Thermal Resistance, Junction to Case 2.1 C/W JC R Thermal Resistance, Junction to Ambient 62.5 C/W JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com D45C8 Rev. B2 1