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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.EGP20A - EGP20K 2.0 A Glass-Passivated High-Efficiency Rectifiers
June 2013
EGP20A - EGP20K
2.0 A Glass-Passivated High-Efficiency Rectifiers
Features
Glass-Passivated Cavity-Free Junction
High Surge Current Capability
Low Leakage Current
Super-Fast Recovery Time for High Efficiency
Low Forward Voltage, High Current Capability
DO-15 Glass case
COLOR BAND DENOTES CATHODE
(1)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Units
Average Rectified Current
I 2.0 A
F(AV)
.375 inch lead length at T = 55C
A
Peak Forward Surge Current
I 8.3 ms single half-sine-wave 75 A
FSM
Superimposed on rated load (JEDEC method)
T , T Junction and Storage Temperature Range -65 to 150 C
J STG
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Total Device Dissipation
3.13 W
P
D
Derate above 25C 25
mWC
R Thermal Resistance, Junction to Ambient 40 C/W
JA
R Thermal Resistance, Junction to Lead 15 C/W
JL
2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
EGP20A - EGP20K Rev. 1.1.0 1