EMX1DXV6T1G, EMX1DXV6T5G Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is www.onsemi.com designed for low power surface mount applications, where board space is at a premium. DUAL NPN GENERAL PURPOSE AMPLIFIER Features TRANSISTORS Reduces Board Space SURFACE MOUNT High h , 210460 (Typical) FE Low V , < 0.5 V CE(sat) (6) (5) (4) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Tr 2 MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit Tr 1 Collector-Base Voltage V 60 Vdc (BR)CBO Collector-Emitter Voltage V 50 Vdc (BR)CEO (1) (2) (3) Emitter-Base Voltage V 7.0 Vdc (BR)EBO Collector Current Continuous I 100 mAdc C THERMAL CHARACTERISTICS 6 Characteristic 1 (One Junction Heated) Symbol Max Unit SOT563 Total Device Dissipation P D CASE 463A T = 25C 357 (Note 1) mW A STYLE 1 Derate above 25C 2.9 (Note 1) mW/C Thermal Resistance 350 (Note 1) C/W R JA Junction-to-Ambient MARKING DIAGRAM Characteristic (Both Junctions Heated) Symbol Max Unit 3X M Total Device Dissipation P D T = 25C 500 (Note 1) mW A Derate above 25C 4.0 (Note 1) mW/C 1 Thermal Resistance R 250 (Note 1) C/W JA Junction-to-Ambient 3X = Specific Device Code M = Month Code Junction and Storage T , T 55 to +150 C J stg = PbFree Package Temperature Range (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. FR4 Minimum Pad See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 2 EMX1DXV6T1/DEMX1DXV6T1G, EMX1DXV6T5G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage V 60 Vdc (BR)CBO (I = 50 Adc, I = 0) C E Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Emitter-Base Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 50 Adc, I = 0) E E Collector-Base Cutoff Current I 0.5 A CBO (V = 60 Vdc, I = 0) CB E Emitter-Base Cutoff Current I 0.5 A EBO (V = 7.0 Vdc, I = 0) EB B Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B DC Current Gain (Note 3) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency f 180 MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) CE C Output Capacitance C 2.0 pF OB (V = 12 Vdc, I = 0 Adc, f = 1 MHz) CB C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width 300 s, D.C. 2%. ORDERING INFORMATION Device Package Shipping EMX1DXV6T1G SOT563 4000 Units / Tape & Reel (PbFree) EMX1DXV6T5G SOT563 8000 Units / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2