EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board EMX2DXV6T5 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage V 60 Vdc (BR)CBO (I = 50 Adc, I = 0) C E Collector-Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B Emitter-Base Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 50 Adc, I = 0) E E Collector-Base Cutoff Current I 0.5 A CBO (V = 60 Vdc, I = 0) CB E Emitter-Base Cutoff Current I 0.5 A EBO (V = 7.0 Vdc, I = 0) EB B Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) 0.4 (I = 50 mAdc, I = 5.0 mAdc) C B DC Current Gain (Note 3) h FE 120 560 (V = 6.0 Vdc, I = 1.0 mAdc) CE C Transition Frequency f 180 MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) CE C Output Capacitance C 2.0 pF OB (V = 12 Vdc, I = 0 Adc, f = 1 MHz) CB C 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width 300 s, D.C. 2%.