ESD7205 ESD Protection Diode Low Capacitance ESD Protection Diodes for High Speed Data Line The ESD7205 ESD protection diode array is designed to protect www.onsemi.com high speed data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting MARKING voltage sensitive high speed data lines. The small form factor, DIAGRAMS flowthrough style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between SOT723 EA M high speed differential lines such as Ethernet and LVDS present in CASE 631AA automotive camera modules. 1 EA = Specific Device Code Features M = Date Code Low Capacitance (0.4 pF Typical, I/O to GND) Diode capacitance matching SC70 ECM Protection for the Following IEC Standards: CASE 419 IEC 6100042 Level 4 (ESD) 1 Low ESD Clamping Voltage (12 V Typical, +16 A TLP, I/O to GND) EC = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code Site and Control Change Requirements AECQ101 Qualified and = PbFree Package PPAP Capable (Note: Microdot may be in either location) These Devices are PbFree and are RoHS Compliant Typical Applications PIN CONFIGURATION 100BASET1 / OPEN Alliance BroadRReach Automotive Ethernet AND SCHEMATIC 10/100/1000BASET1 Ethernet Pin 1 Pin 2 LVDS Automotive USB 2.0/3.0 High Speed Differential Pairs MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Pin 3 Operating Junction Temperature Range T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L = Maximum (10 Seconds) IEC 6100042 Contact ESD 25 kV IEC 6100042 Air 25 ISO 10605 330 pF / 330 Contact 20 ISO 10605 330 pF / 2 k Contact 30 ISO 10605 150 pF / 2 k Contact 30 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the See detailed ordering, marking and shipping information in the device. If any of these limits are exceeded, device functionality should not be package dimensions section on page 6 of this data sheet. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2019 Rev. 6 ESD7205/DESD7205 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working V I/O Pin to GND 5.0 V RWM Voltage Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.2 6.0 8.0 V BR T Reverse Leakage I V = 5.0 V, I/O Pin to GND 1 A R RWM Current Clamping Voltage V IEC6100042, 8 kV Contact See Figures 3 and 4 C (Note 1) Clamping Voltage TLP V I = 8 A 10 V C PP (Note 2) I = 16 A 12.5 PP I = 8 A 4.0 PP I = 16 A 8.0 PP Junction Capacitance C VR = 0 V, f = 1 MHz between I/O1 to GND and I/O 5 10 % J Match 2 to GND Junction Capacitance C pF VR = 0 V, f = 1 MHz between I/O Pins and GND J 0.34 0.55 ESD7205DT5G 0.47 0.85 ESD7205WTT1G VR = 0 V, f = 1 MHz between I/O Pins 0.20 0.35 ESD7205DT5G 0.23 0.40 ESD7205WTT1G 3dB Bandwidth f R = 50 5 GHz BW L 1. For test procedure see Figures 5 and 6 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2