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TM FDMS8026S N-Channel PowerTrench SyncFET October 2014 FDMS8026S TM N-Channel PowerTrench SyncFET 30 V, 22 A, 4.3 m Features General Description The FDMS8026S has been designed to minimize losses in Max r = 4.3 m at V = 10 V, I = 19 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 5.2 m at V = 4.5 V, I = 17 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance.This DS(on) Advanced package and Silicon combination for low r DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU low side switch RoHS Compliant Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G 6 3 S D 7 2 S D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous (Package limited) T = 25C 22 C -Continuous (Silicon limited) T = 25C 80 C I A D -Continuous T = 25C (Note 1a) 19 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 33 mJ AS Power Dissipation T = 25C 41 C P W D Power Dissipation T = 25C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.0 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8026S FDMS8026S Power 56 13 12 mm 3000 units 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS8026S Rev.C2