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FDMS8820 N-Channel PowerTrench MOSFET May 2015 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 160 A, 2.0 m Features General Description Max r = 2.0 m at V = 10 V, I = 28 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 2.4 m at V = 4.5 V, I = 25 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) and high efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design VRM Vcore Switching For Desktop And Server 100% UIL tested OringFET / Load Switching RoHS Compliant DC-DC Conversion Bottom Top Pin 1 S D S S S G D S Pin 1 D S D D D G D D Power 56 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) 20 V GS Drain Current -Continuous T = 25 C (Note 6) 160 C -Continuous T = 100 C (Note 6) 101 C I A D -Continuous T = 25 C (Note 1a) 28 A -Pulsed (Note 5) 634 E Single Pulse Avalanche Energy (Note 3) 294 mJ AS Power Dissipation T = 25 C 78 C P W D Power Dissipation T = 25 C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.6 JC C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8820 FDMS8820 Power 56 13 12 mm 3000 units 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDMS8820 Rev. 1.3