FFPF10UP20S 10 A, 200 V, Ultrafast Diode Description The FFPF10UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power www.onsemi.com supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder and UPS application. Features Ultrafast Recovery t = 35 ns ( I = 1 A) rr F 1 2 Max Forward Voltage, V = 1.15 V ( T = 25C) F C 1. Cathode 2. Anode Reverse Voltage, V = 200 V RRM Avalanche Energy Rated This Device is PbFree and is RoHS Compliant Applications Power Switching Circuits, SMPS Output Rectifiers Freewheeling Diodes 12 ABSOLUTE MAXIMUM RATINGS TO220, 2Lead T = 25C unless otherwise noted C CASE 221AS Symbol Parameter Rating Unit V Peak Repetitive Reverse Voltage 200 V RRM MARKING DIAGRAM V Working Peak Reverse Voltage 200 V RWM I Average Rectified Forward Current 10 A F(AV) T = 25C C I Nonrepetitive Peak Surge Current 100 A FSM 60 Hz Single HalfSine Wave T , T Operating Junction and Storage 65 to C J STG Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y&Z&3&K assumed, damage may occur and reliability may be affected. F10UP20S Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot F10UP20S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: March, 2019 Rev. 4 FFPF10UP20S/DFFPF10UP20S THERMAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Max. Unit C/W R Maximum Thermal Resistance, Junction to Case 4.3 JC PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF10UP20STU F10UP20S TO220F2L Tube N/A N/A 50 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min. Typ. Max. Unit V Forward Voltage V F (Note 1) I = 10 A T = 25C 1.15 F C I = 10 A T = 125C 1.10 F C I Reverse Current A R (Note 1) rated V T = 25C 100 R C T = 100C 500 C t Reverse Recovery Time T = 25C 32 ns rr C I Reverse Recovery Current 1.65 A rr Q Reverse Recovery Charge 24.4 nC rr (I = 6 A, di /dt = 200 A/ s, V = 130 V) F F R W Avalanche Energy (L = 40 mH) 5 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2