FFPF10UP60S 10 A, 600 V Ultrafast Diode Description The FFPF10UP60S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as www.onsemi.com freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder and UPS application. Features Ultrafast Recovery, t = 40 ns ( I = 1 A) 1 2 RR F 1. Cathode 2. Anode Max Forward Voltage, V = 2.2 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant Applications General Purpose SMPS, Power Switching Circuits 12 FreeWheeling Diode for Motor Application Welder, UPS TO220, 2Lead CASE 221AS ABSOLUTE MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Rating Unit MARKING DIAGRAM VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V IF(AV) Average Rectified Forward Current 10 A T = 60C C IFSM Nonrepetitive Peak Surge Current 50 A 60Hz Single HalfSine Wave TJ, TSTG Operating Junction and Storage 65 to C Temperature +175 Y&Z&3&K F10UP60S Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot F10UP60S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: March, 2019 Rev. 3 FFPF10UP60S/DFFPF10UP60S THERMAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Max. Unit RJC C/W Maximum Thermal Resistance, Junction to Case 4.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF10UP60STU F10UP60S TO220F2L Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min. Typ. Max. Unit V Maximum Instantaneous Forward Voltage F (Note 1) I = 10 A T = 25C 2.2 V F C I = 10 A T = 100C 2.0 F C I Maximum Instantaneous Reverse Current R (Note 1) rated V T = 25C 100 A R C T = 100C 500 C t I = 1 A, di /dt = 100 A/s, V = 30 V T = 25C 25 ns RR F F R C t Reverse Recovery Time 34 40 ns RR I Reverse Recovery Current 1.0 1.5 A RR Q Reverse Recovery Charge 17 30 nC RR (I = 8 A, di /dt = 200 A/ s, V = 390 V) F F R t Maximum Reverse Recovery Time 58 ns RR (I =10 A, di /dt = 200 A/ s, V = 390 V) F F R W Avalanche Energy (L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2