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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.FJBE2150D ESBC Rated NPN Silicon Transistor January 2016 FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features (FDC655 MOSFET) The FJBE2150D is a low-cost, high-performance power V I Equiv. R CS(ON) C CS(ON) switch designed to be used in an ESBC configuration in (1) 0.131 V 0.5 A 0.261 applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is Low Equivalent On Resistance designed to operate up to 1500 volts and up to 3 amps, Very Fast Switch: 150 kHz while providing exceptionally low on-resistance and very Squared RBSOA: Up to 1500 V low switching losses. Avalanche Rated The ESBC switch is designed to be driven using off-the- Low Driving Capacitance, No Miller Capacitance shelf power supply controllers or drivers. The ESBC Typ. 12 pF Capacitance at 200 V) MOSFET is a low-voltage, low-cost, surface-mount Low Switching Losses device that combines low-input capacitance and fast Reliable HV Switch: No False Triggering due to switching. The ESBC configuration further minimizes High dv/dt Transients the required driving power because it does not have Miller capacitance. Applications The FJBE2150D provides exceptional reliability and a High-Voltage and High-Speed Power Switches large operating range due to its square Reverse-Bias- Safe-Operating-Area (RBSOA) and rugged design. The Emitter-Switched Bipolar/MOSFET Cascode device is avalanche rated and has no parasitic transis- (ESBC ) tors, so is not prone to static dv/dt failures. Smart Meters, Smart Breakers, The power switch is manufactured using a dedicated HV Industrial Power Supplies high-voltage bipolar process and is packaged in high-volt- Motor Drivers and Ignition Drivers age HV-D2PAK rated at 2500 V creepage and clearance. C (3) C 3 B FJBE2150D (1) B FDC655 G D2-PAK 2L 1 2 E (2) S 1.Base 2.Emitter 3.Collector (2) Figure 1. Pin Configuration Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration Ordering Information Part Number Marking Package Packing Method FJBE2150DTU J2150D D2-PAK 2L (TO-263 2L) Tube Notes: 1. Figure of Merit. 2. Other Fairchild MOSFETs can be used in this ESBC application. 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FJBE2150D Rev. 1.4