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This literature is subject to all applicable copyright laws and is not for resale in any manner.FSB50450T Smart Power Module (SPM) May 2007 FSB50450T Smart Power Module (SPM ) Features General Description FSB50450T is a tiny smart power module (SPM ) based on 500V 3.0A 3-phase FRFET inverter including high voltage FRFET technology as a compact inverter solution for small integrated circuit (HVIC) power motor drive applications such as fan motors and water 3 divided negative dc-link terminals for inverter current sens- suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), ing applications and 3 half-bridge HVICs for FRFET gate driving. FSB50450T provides low electromagnetic interference (EMI) characteristics HVIC for gate driving and undervoltage protection with optimized switching speed. Moreover, since it employs 3/5V CMOS/TTL compatible, active-high interface FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based Optimized for low electromagnetic interference power module or one-chip solution. The package is optimized Isolation voltage rating of 1500Vrms for 1min. for the thermal performance and compactness for the use in the built-in motor application and any other application where the Extended VB pin for PCB isolation assembly space is concerned. FSB50450T is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units DC Link Input Voltage, V 500 V PN Drain-source Voltage of each FRFET I Each FRFET Drain Current, Continuous T = 25C 1.5 A D25 C I Each FRFET Drain Current, Continuous T = 100C 1.0 A D80 C I Each FRFET Drain Current, Peak T = 25C, PW < 100s 3.0 A DP C P Maximum Power Dissipation T = 25C, Each FRFET 10 W D C V Control Supply Voltage Applied between V and COM 20 V CC CC V High-side Bias Voltage Applied between V -U, V -V, V -W 20 V BS B(U) B(V) B(W) V Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V IN T Operating Junction Temperature -20 ~ 150 C J T Storage Temperature -50 ~ 150 C STG Each FRFET under inverter operating con- Junction to Case Thermal Resistance C/W R 8.9 JC dition (Note 1) 60Hz, Sinusoidal, 1 minute, Connection V Isolation Voltage 1500 V ISO rms pins to heatsink 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB50450T Rev. B