DATA SHEET www.onsemi.com 6-Pin General Purpose Phototransistor Optocoupler PDIP6 CASE 646BX 6 1 H11A1M PDIP6 Description 6 S SUFFIX The general purpose optocoupler consists of a gallium arsenide CASE 646BY 1 infrared emitting diode driving a silicon phototransistor in a standard plastic 6pin dualinline package. Features PDIP6 T SUFFIX Minimum Current Transfer Ratio, 50% at I = 10 mA, V = 10 V: F CE 6 CASE 646BZ Safety and Regulatory Approvals: 1 UL1577, 4,170 VAC for 1 Minute RMS DINEN/IEC6074755, 850 V Peak Working Insulation Voltage MARKING DIAGRAM Applications Power Supply Regulators ON Digital Logic Inputs H11A1 Microprocessor Inputs VXYYQ ON = Logo H11A1 = Specific Device Code V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) X = OneDigit Year Code YY = Digit Work Week Q = Assembly Package Code SCHEMATIC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: November, 2021 Rev. 2 H11A1M/DH11A1M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, <150 V IIV RMS For Rated Mains Voltage <300 V IIV RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , Type and Sample Test 1360 V PR IORM PR peak with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 100% Production Test 1594 V IORM PR peak with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit values maximum values allowed in the event of a failure. www.onsemi.com 2